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Results (81):

Title Effects of Interfacial Charges on Doped and Undoped HfOx Stack Layer with Tin Metal Gate Electrode for Nano-Scaled CMOS Generation
Authors S. Chatterjee, Y. Kuo
Issue Volume 3, Year 2011, Number 1, Part 1
Pages 0162 - 0169
Title Effect of Grain Size on the Threshold Voltage for Double-Gate Polycrystaline Silicon MOSFET
Authors Mahesh Chandra, Alka Panwar, B.P. Tyag
Issue Volume 3, Year 2011, Number 1, Part 3
Pages 0474 - 0478
Title Two Dimensional Analytical Modeling for SOI and SON MOSFET and Their Performance Comparison
Authors Saptarsi Ghosh, Khomdram Jolson Singh, Sanjay Deb, Subir Kumar Sarkar
Issue Volume 3, Year 2011, Number 1, Part 3
Pages 0569 - 0575
Title Two-Dimensional Analytical Modeling of Threshold Voltage of Doped Short-Channel Triple-Material Double-Gate (Tm-Dg) MOSFET's
Authors Sarvesh Dubey, Dheeraj Gupta, Pramod Kumar Tiwari, S. Jit
Issue Volume 3, Year 2011, Number 1, Part 3
Pages 0576 - 0583
Title Metal-Semiconductor Field-Effect Transistors Fabricated Using DVT Grown n-MoSe2 Crystals With Cu-Schottky Gates
Authors C.K. Sumesh, K.D. Patel, V.M. Pathak, R.Srivastava
Issue Volume 3, Year 2011, Number 1, Part 4
Pages 0709 - 0713
Title Strategic Review of Arsenide, Phosphide and Nitride MOSFETs
Authors Gourab Dutta, Palash Das, Partha Mukherjee, Dhrubes Biswas
Issue Volume 3, Year 2011, Number 1, Part 4
Pages 0728 - 0740
Title Electrostatics of Silicon Nano Transistor
Authors Lalit Singh, B.P. Tyag
Issue Volume 3, Year 2011, Number 1, Part 4
Pages 0808 - 0813
Title A Two-Dimensional (2D) Potential Distribution Model for the Short Gate-Length Ion-Implanted GaAs Mesfets Under Dark and Illuminated Conditions
Authors Shweta Tripathi, S. Jit
Issue Volume 3, Year 2011, Number 1, Part 5
Pages 0868 - 0877
Title A 2-D Analytical Threshold Voltage Model for Symmetric Double Gate MOSFET's Using Green’s Function
Authors Anoop Garg, S.N. Sinha, R.P. Agarwal
Issue Volume 3, Year 2011, Number 1, Part 5
Pages 0894 - 0902
Title Role of Interface Charges on High-k Based Poly-Si and Metal Gate Nano-Scale MOSFETs
Authors N. Shashank, Vikram Singh, W.R. Taube, R.K. Nahar
Issue Volume 3, Year 2011, Number 1, Part 5
Pages 0937 - 0941
Title A Doping Dependent Threshold Voltage Model of Uniformly Doped Short-Channel Symmetric Double-Gate (DG) MOSFET’s
Authors P.K. Tiwari, S. Dubey, S. Jit
Issue Volume 3, Year 2011, Number 1, Part 5
Pages 0963 - 0971
Title Effect of Drift Region Doping and Coulmn Thickness Variations in a Super Junction Power MOSFET: a 2-D Simulation Study
Authors Deepti Sharma, Rakesh Vaid
Issue Volume 3, Year 2011, Number 1, Part 5
Pages 1112 - 1119
Title Channel Length Effect on Subthreshold Characteristics of Junctionless Trial Material Cylindrical Surrounding-Gate MOSFETs with High-k Gate Dielectrics
Authors Fairouz Lagraf,, Djamil Rechem, Kamel Guergouri, Mourad Zaabat
Issue Volume 4, Year 2012, Number 1
Pages 02011-1 - 02011-5
Title Effect of Gate Length Scaling on Various Performance Parameters in DG-FinFETs: a Simulation Study
Authors Rakesh Vaid, Meenakshi Chandel
Issue Volume 4, Year 2012, Number 3
Pages 03007-1 - 03007-6
Title Performance of a Double Gate Nanoscale MOSFET (DG-MOSFET) Based on Novel Channel Materials
Authors Rakesh Prasher, Devi Dass, Rakesh Vaid
Issue Volume 5, Year 2013, Number 1
Pages 01017-1 - 01017-5
Title Impact of Scaling Gate Insulator Thickness on the Performance of Carbon Nanotube Field Effect Transistors (CNTFETs)
Authors Devi Dass, Rakesh Prasher, Rakesh Vaid
Issue Volume 5, Year 2013, Number 2
Pages 02014-1 - 02014-6
Title Comparison of Atomic Level Simulation Studies of MOSFETs Containing Silica and Lantana Nanooxide Layers
Authors K. Bikshalu, M.V. Manasa, V.S.K. Reddy, P.C.S. Reddy, K. Venkateswara Rao
Issue Volume 5, Year 2013, Number 4
Pages 04058-1 - 04058-3
Title Investigation of CNTFET Performance with Gate Control Coefficient Effect
Authors S.A. Khan, M. Hasan, S.M. Mominuzzaman
Issue Volume 6, Year 2014, Number 2
Pages 02008-1 - 02008-4
Title On the Applicability of HF and μ-PCD Methods for Determination of Carrier Recombination Lifetime in the Non-passivated Single-crystal Silicon Samples
Authors I.М. Anfimov, S.P. Kobeleva, I.V. Schemerov, M.N. Orlova
Issue Volume 6, Year 2014, Number 3
Pages 03018-1 - 03018-3
Title Analysis of Voltage Transfer Characteristics of Nano-scale SOI CMOS Inverter with Variable Channel Length and Doping Concentration
Authors A. Daniyel Raj, C. Rajarajachozhan, Sanjoy Deb
Issue Volume 7, Year 2015, Number 1
Pages 01004-1 - 01004-4
Title Study of Short Channel Effects in n-FinFET Structure for Si, GaAs, GaSb and GaN Channel Materials
Authors Tawseef A. Bhat, M. Mustafa, M.R. Beigh
Issue Volume 7, Year 2015, Number 3
Pages 03010-1 - 03010-5
Title An Analytical Universal Model for Symmetric Double Gate Junctionless Transistors
Authors N. Bora, P. Das, R. Subadar
Issue Volume 8, Year 2016, Number 2
Pages 02003-1 - 02003-4
Title Effects of High-k Dielectrics with Metal Gate for Electrical Characteristics of SOI TRI-GATE FinFET Transistor
Authors Fatima Zohra Rahou, A.Guen Bouazza, B. Bouazza
Issue Volume 8, Year 2016, Number 4
Pages 04037-1 - 04037-4
Title A Two Dimensional Surface Potential Model for Triple Material Double Gate Junctionless Field Effect Transistor
Authors A. Kumar, A. Chaudhry, V. Kumar, V. Sharma
Issue Volume 8, Year 2016, Number 4
Pages 04042-1 - 04042-5
Title CNTFET-Based Design of a High-Efficient Full Adder Using XOR Logic
Authors Seyedehsomayeh Hatefinasab
Issue Volume 8, Year 2016, Number 4
Pages 04061-1 - 04061-6
Title Two Dimensional Modeling of III-V Heterojunction Gate All Around Tunnel Field Effect Transistor
Authors Manjula Vijh, R.S. Gupta, Sujata Pandey
Issue Volume 9, Year 2017, Number 1
Pages 01030-1 - 01030-4
Title Impact of SWCNT Band Gaps on the Performance of a Ballistic Carbon Nanotube Field Effect Transistors (CNTFETs)
Authors Devi Dass, Rakesh Vaid
Issue Volume 9, Year 2017, Number 4
Pages 04007-1 - 04007-5
Title Small Signal Parameter Extraction of III-V Heterojunction Surrounding Gate Tunnel Field Effect Transistor
Authors Manjula Vijh, R.S. Gupta, Sujata Pandey
Issue Volume 9, Year 2017, Number 4
Pages 04004-1 - 04004-4
Title Comparative Analysis of CNTFET and CMOS Logic based Arithmetic Logic Unit
Authors K. Nehru, T. Nagarjuna, , G. Vijay,
Issue Volume 9, Year 2017, Number 4
Pages 04018-1 - 04018-4
Title Simulation and Performance Analysis of 32 nm FinFet based 4-Bit Carry Look Adder
Authors S. Rashid, S. Khan, A. Singh,
Issue Volume 9, Year 2017, Number 5
Pages 05003-1 - 05003-4
Title Analytical Modeling & Simulation of OFF-State Leakage Current for Lightly Doped MOSFETs
Authors Nitin Sachdeva, Munish Vashishath, P.K. Bansal
Issue Volume 9, Year 2017, Number 6
Pages 06009-1 - 06009-4
Title Effects of Stone-Wales Defect Position in Graphene Nanoribbon Field-Effect Transistor
Authors H. Owlia, P. Keshavarzi, M.B. Nasrollahnejad
Issue Volume 9, Year 2017, Number 6
Pages 06008-1 - 06008-5
Title Energy Efficient Design of Four-operand Multiplier Architecture using CNTFET Technology
Authors N. Charmchi, M.R. Reshadinezhad
Issue Volume 10, Year 2018, Number 2
Pages 02022-1 - 02022-8
Title Temperature Characteristics of Silicon Nanowire Transistor Depending on Oxide Thickness
Authors Hani Taha AlAriqi, Waheb A. Jabbar,, , Yasir Hashim, Hadi Bin Manap
Issue Volume 11, Year 2019, Number 3
Pages 03027-1 - 03027-4
Title A Graphical Method to Study Electrostatic Potentials of 25 nm Channel Length DG SOI MOSFETs
Authors M. Djerioui, M. Hebali, D. Chalabi, A. Saidane
Issue Volume 10, Year 2018, Number 4
Pages 04027-1 - 04027-4
Title An Analytical Modeling of Drain Current for Single Material Surrounded Gate Nanoscale SOI MOSFET
Authors Arjimand Ashraf, Prashant Mani
Issue Volume 10, Year 2018, Number 4
Pages 04012-1 - 04012-5
Title A New Electro-Thermal Modeling of Low Voltage Power MOSFET with Junction Tempera-ture Dependent Foster (RC) Thermal Network
Authors Smail Toufik, Dibi Zohir
Issue Volume 10, Year 2018, Number 4
Pages 04017-1 - 04017-5
Title Charge Based Quantization Model for Triple-Gate FINFETS
Authors P. Vimala
Issue Volume 10, Year 2018, Number 5
Pages 05015-1 - 05015-5
Title PSpice Implementation and Simulation of a New Electro-Thermal Modeling for Estimating the Junction Temperature of Low Voltage Power MOSFET
Authors Toufik Smail, Zohir Dibi, Douadi Bendib
Issue Volume 10, Year 2018, Number 6
Pages 06004-1 - 06004-5
Title Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions
Authors Ahmed Mahmood, Waheb A. Jabbar, Yasir Hashim, Hadi Bin Manap
Issue Volume 11, Year 2019, Number 1
Pages 01011-1 - 01011-5
Title Channel Length Effect on Subthreshold Characteristics of Junctionless Trial Material Cylindrical Surrounding-Gate MOSFETs with High-k Gate Dielectrics
Authors Fairouz Lagraf,, Djamil Rechem,, Kamel Guergouri,, Mourad Zaabat,
Issue Volume 11, Year 2019, Number 2
Pages 02011-1 - 02011-5
Title Design and Analysis of Ternary D-Latch Using CNTFETs
Authors Anirban Banerjee, Vikash Prasad, Debaprasad Das
Issue Volume 11, Year 2019, Number 4
Pages 04011-1 - 04011-5
Title Impact of the High-K Dielectric Material as Spacer on Analog and RF Performance of the GS-DG-FinFET
Authors A. Pattnaik, Sruti S. Singh, S.K. Mohapatra
Issue Volume 11, Year 2019, Number 6
Pages 06028-1 - 06028-7
Title Numerical Simulation of FinFET Transistors Parameters
Authors І.P. Buryk, A.O. Golovnia, M.M. Ivashchenko, L.V. Odnodvorets
Issue Volume 12, Year 2020, Number 3
Pages 03005-1 - 03005-4
Title Design and Development of an Efficient Branch Predictor for an In-order RISC-V Processor
Authors C. Arul Rathi, G. Rajakumar, T. Ananth Kumar, T.S. Arun Samuel
Issue Volume 12, Year 2020, Number 5
Pages 05021-1 - 05021-4
Title Numerical Simulation of Field-effect Transistor GAA SiNWFET Parameters Based on Nanowires
Authors І.P. Buryk, M.M. Ivashchenko, A.O. Holovnia, L.V. Odnodvorets
Issue Volume 12, Year 2020, Number 6
Pages 06012-1 - 06012-4
Title Single Electron Transistor Based Current Mirror: Modelling and Performance Characterization
Authors Ashok.D. Vidhate, Shruti Suman
Issue Volume 13, Year 2021, Number 1
Pages 01017-1 - 01017-5
Title Investigation of High-K Gate Dielectrics and Chirality on the Performance of Nanoscale CNTFET
Authors L. Renuka Devi, N. Arumugam, J.E. Jayanthi, T.S. Arun Samuel, T. Ananth Kumar
Issue Volume 13, Year 2021, Number 2
Pages 02026-1 - 02026-8
Title Performance Assessment of a New Gaussian-doped Junctionless ISFET: A Numerical Study
Authors Khadidja Dibi, Zohir Dibi, Ahmed Bouridane
Issue Volume 13, Year 2021, Number 2
Pages 02029-1 - 02029-5
Title Effect of High-k Dielectric Materials on Short Channel Effects of a 14 nm Tri-Gate SOI FinFET for Reduced Area on Chip
Authors S. Nanda, R.S. Dhar
Issue Volume 13, Year 2021, Number 3
Pages 03015-1 - 03015-4
Title Influence of Triple Material on Performance Study of Double Gate PiN Tunneling Graphene Nanoribbon FET for Low Power Logic Applications
Authors Ritam Dutta, Nitai Paitya
Issue Volume 13, Year 2021, Number 3
Pages 03020-1 - 03020-4
Title Study of a New Device Structure: Graphene Field Effect Transistor (GFET)
Authors P. Vimala, Manjunath Bassapuri, C.R. Harshavardhan, P. Harshith, Rahul Jarali, T.S. Arun Samuel
Issue Volume 13, Year 2021, Number 4
Pages 04021-1 - 04021-5
Title Impact of High-k Dielectric Materials on Short Channel Effects in Tri-gate SOI FinFETs
Authors Zohmingmawia Renthlei, Swagat Nanda, Rudra Sankar Dhar
Issue Volume 13, Year 2021, Number 5
Pages 05013-1 - 05013-6
Title Modeling and Simulation of MOSFET (High-k Dielectric) Using Genetic Algorithms
Authors Abdelkrim Mostefai, Smail Berrah, Hamza Abid
Issue Volume 13, Year 2021, Number 6
Pages 06004-1 - 06004-5
Title Si- and Ge-FinFET Inverter Circuits Optimization Based on Driver to Load Transistor Fin Ratio
Authors Yasir Hashim, Safwan Mawlood Hussein
Issue Volume 13, Year 2021, Number 6
Pages 06011-1 - 06011-4
Title On the Time Resolved Optogalvanic Spectroscopy of Neon in a Hollow Cathode Discharge
Authors Koutayba Alnama, Abdulkader Jazmati
Issue Volume 13, Year 2021, Number 6
Pages 06012-1 - 06012-6
Title Evaluation of Device Fabrication from FET to CFET: A Review
Authors J. Lakshmi Prasanna, M. Ravi Kumar, Ch. Priyanka, Chella Santhosh
Issue Volume 13, Year 2021, Number 6
Pages 06030-1 - 06030-8
Title Performance Analysis of Gate All Around (GAA) MOSFET at Cryogenic Temperature for the Sub-Nanometer Regime
Authors M. Lakshmana Kumar, Biswajit Jena
Issue Volume 13, Year 2021, Number 6
Pages 06034-1 - 06034-4
Title Performance Estimation of Recessed Modified Junctionless Multigate Transistor
Authors K. Kalai Selvi, K.S. Dhanalakshmi, Kalaivani Kanagarajan
Issue Volume 14, Year 2022, Number 1
Pages 01008-1 - 01008-5
Title Electrical and Temperature Characteristics of Transistors with a Channel in the Form of a Carbon Nanotube
Authors І.P. Buryk, M. Martynenko, L.V. Odnodvorets,, Ya.V. Hyzhnya, N.I. Shumakova, M.P. Buryk
Issue Volume 14, Year 2022, Number 1
Pages 01024-1 - 01024-5
Title Modelling and Implementation of Double Gate n-channel FET with Strain Engineered Tri-Layered Channel System for Enriched Drain Current
Authors Kuleen Kumar, Rudra Sankar Dhar, Swagat Nanda
Issue Volume 14, Year 2022, Number 2
Pages 02028-1 - 02028-5
Title Improvement Analysis of Leakage Currents with Stacked High-k/Metal Gate in 10 nm Strained Channel HOI FinFET
Authors Payal Kumari, Swagat Nanda, Priyanka Saha, Rudra Sankar Dhar
Issue Volume 14, Year 2022, Number 2
Pages 02004-1 - 02004-4
Title Design and Analysis of Junctionless VTFET Device for Sensing Applications
Authors Anwesh, Divakaran S., Ravi Prakash Dwivedi, Yogendra Singh, Lucky Agarwal
Issue Volume 14, Year 2022, Number 3
Pages 03019-1 - 03019-5
Title Implementation and Analysis of an L-Shaped Tunnel Field Effect Transistor by Incorporating Gate and Oxide Engineering
Authors R. Dhanush, S. Ashok Kumar, V. Logisvary
Issue Volume 14, Year 2022, Number 5
Pages 05015-1 - 05015-4
Title Combined (Si) and (Ge) FinFET-CMOS Inverter Characterization Based on Driver to Load Transistor Ratio
Authors Yasir Hashim, Safwan Mawlood Hussein
Issue Volume 14, Year 2022, Number 5
Pages 05003-1 - 05003-6
Title Power and Threshold Voltage Analysis of 14 nm FinFET 12T SRAM Cell for Low Power Applications
Authors P. Parthasarathi, T.S. Arun Samuel, P. Vimala, N. Arumugam
Issue Volume 14, Year 2022, Number 5
Pages 05008-1 - 05008-6
Title Impact of Device Sizing on Electrical Properties of DG-SOI-MOSFET Using Octave Software
Authors M. Djerioui, M. Hebali, M. Abboun Abid
Issue Volume 14, Year 2022, Number 5
Pages 05025-1 - 05025-4
Title Implementation of a Linearly Graded Binary Metal Gate Work Function VTFET with Air Pocket
Authors K. Kalai Selvi, K.S. Dhanalakshmi
Issue Volume 14, Year 2022, Number 6
Pages 06014-1 - 06014-6
Title Organic Field Effect Transistor Based on Adaptive Neuro-Fuzzy Inference System
Authors Imad Benacer, Fateh Moulahcene, Fateh Bouguerra, Ammar Merazga
Issue Volume 15, Year 2023, Number 2
Pages 02001-1 - 02001-9
Title High Temperature Effects on the Static Performance of 14 nm TG SOI N FinFET
Authors A. Lazzaz, K. Bousbahi, M. Ghamnia
Issue Volume 15, Year 2023, Number 2
Pages 02005-1 - 02005-5
Title Low Voltage Symmetric Dual-Gate Organic Field Effect Transistor
Authors Imad Benacer, Fateh Moulahcene, Fateh Bouguerra, Ammar Merazga
Issue Volume 15, Year 2023, Number 2
Pages 02012-1 - 02012-6
Title Performance Analysis of Charge-plasma Based Doping less Nanowire Field Effect Transistor
Authors P. Raja, P. Naveen Chander, B. Mohamed Faisal, V. Prakash
Issue Volume 15, Year 2023, Number 3
Pages 03031-1 - 03031-3
Title Analysis of Charge Plasma Based Hetero Junction Nanowire Multi Channel Field Effect Transistor for Sub 10 nm
Authors M. Balaji, S. Ashok Kumar
Issue Volume 15, Year 2023, Number 4
Pages 04032-1 - 04032-4
Title Repercussions Through Inclusion of Multi Bridge Channels into Gate All Around Nano-Wire Field Effect Transistor
Authors S. Ashok Kumar, J. Soundararajan, P. Mahendra Peruman, J. Susmitha, K. Krishnaprasath
Issue Volume 15, Year 2023, Number 5
Pages 05019-1 - 05019-4
Title Temperature Impact on the Characteristics of N-Channel GaP Fin Field Effect Transistor (GaP-FinFET)
Authors Y. Hashim
Issue Volume 16, Year 2024, Number 1
Pages 01018-1 - 01018-4
Title Performance Enhancement of the Urdhva-Tiryagbhyam based Vedic Multiplier using FinFET
Authors P. Vimala, Soumya G. Hosmani
Issue Volume 16, Year 2024, Number 2
Pages 02002-1 - 02002-5
Title Measurement of Very Small Variation of Effective Resistance of MOSFET Deputed in Active Microgrid Inverter Operation
Authors S.S. Ghosh, S. Chattopadhyay, R.V.V. Krishna, Ranjan Kumar Mahapatra, A. Das, Sudipta Das
Issue Volume 16, Year 2024, Number 3
Pages 03029-1 - 03029-5
Title OFET Biosensor: Simulation and Analysis for Various Biomolecules
Authors S. Bathla, A. Verma , S.I. Amin, A. Kumar, V.K. Jain
Issue Volume 16, Year 2024, Number 5
Pages 05014-1 - 05014-5
Title A Simulation Study on the Performance of Double Gate Junctionless Field Effect Transistor for Doping Concentration Variation
Authors P. Saikia, A.K. Raibaruah , K.C.D. Sarma
Issue Volume 16, Year 2024, Number 5
Pages 05016-1 - 05016-4
Title Design and Analysis of Charge Plasma-Based Heterogeneous L-Shaped Tunnel Field-Effect Transistor (TFET) for Low-Power Applications
Authors P. Raja, S.A. Kumar, S.B. Shree, R. Deepadharshini, S. Dharani
Issue Volume 16, Year 2024, Number 5
Pages 05027-1 - 05027-4
Title Resistance Based Drain Current Model of Surrounded Channel Junction Less Field Effect Transistor
Authors N. Das , K.C.D. Sarma
Issue Volume 16, Year 2024, Number 4
Pages 04002-1 - 04002-5