An Analytical Modeling of Drain Current for Single Material Surrounded Gate Nanoscale SOI MOSFET

Authors Arjimand Ashraf1, Prashant Mani
Affiliations

1M. Tech Scholar, ECE Department, SRM University, Delhi NCR, India

2AssociateProfessor, ECE Department, SRM University, Delhi NCR, India

Е-mail [email protected]
Issue Volume 10, Year 2018, Number 4
Dates Received 21 March 2018; published online 25 August 2018
Citation Arjimand Ashraf, Prashant Mani, J. Nano- Electron. Phys. 10 No 4, 04012 (2018)
DOI http://dx.doi.org/10.21272/jnep.10(4).04012
PACS Number(s) 61.48.De
Keywords SMG SGT SOI MOSFET, Linear region, Sub-threshold, Saturation (6) , DIBL (6) .
Annotation

In this paper, we have presented modeling of drain current for single material surrounded gate SOI MOSFET (SMG SGT SOI MOSFET) whose channel length is 40nm. We have studied the behavior of device by varying various device parameters in Linear, Saturation, and Sub-threshold regions. We have also presented a drain current model incorporating DIBL. The comparison between previously presented model with channel length = 50 nm and our scaled model is also presented in various regions of  device operation.

List of References