Investigation of CNTFET Performance with Gate Control Coefficient Effect

Authors S.A. Khan1, M. Hasan2, S.M. Mominuzzaman3
Affiliations

1 Robotics Research Lab, School of Engineering and Computer Science, BRAC University, Bangladesh

2 Department of Electrical & Electronic Engineering, BRAC University, Bangladesh

3 Department of Electrical & Electronic Engineering, Bangladesh University of Engineering & Technology, Bangladesh

Е-mail [email protected], [email protected]
Issue Volume 6, Year 2014, Number 2
Dates Received 23 March 2014; revised manuscript received 05 June 2014; published online 20 June 2014
Citation S.A. Khan, M. Hasan, S.M. Mominuzzaman, J. Nano- Electron. Phys. 6 No 2, 02008 (2014)
DOI
PACS Number(s) 61.46.Fg; 85.35.Kt; 63.20.Kr
Keywords Gate Control Coefficient, CNTFET (9) , Drain сurrent, Transconductance (3) .
Annotation For the first time, a deep study of gate control coefficient (αG) effect on CNTFET performance has done in this research. A new, analytical CNTFET simulation along with multiple parameter approach has executed with 3D output in MATLAB and that used it to examine device performance. It is found that, drain current and transconductance increases with high gate control coefficient. On the other hand, total capacitance decreases with high αG value resulting improved charging energy. Likewise, drain induced barrier lowering (DIBL) decreases with αG that provides less deviation from ideal device performance. Finally, subthreshold swing comes very close to the theoretical limit at high αG which is desired for low threshold voltage and low-power operation for FETs scaled down to small sizes.

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