Electrical and Temperature Characteristics of Transistors with a Channel in the Form of a Carbon Nanotube

Authors І.P. Buryk1 , M. Martynenko2 , L.V. Odnodvorets2 , , Ya.V. Hyzhnya2, N.I. Shumakova2 , M.P. Buryk3
Affiliations

1Konotop Institute of Sumy State University, 24, Myru Ave, 41615 Konotop, Ukraine

2Sumy State University, 2, Rymsky-Korsakov St., 40007 Sumy, Ukraine

3National Technical University of Ukraine "Igor Sikorsky Kyiv Polytechnic Institute", 37, Peremohy Ave, 03056 Kyiv, Ukraine

Е-mail l.odnodvorets@aph.sumdu.edu.ua
Issue Volume 14, Year 2022, Number 1
Dates Received 07 December 2021; revised manuscript received 24 February 2022; published online 28 February 2022
Citation І.P. Buryk, M. Martynenko, L.V. Odnodvorets, et al., J. Nano- Electron. Phys. 14 No 1, 01024 (2022)
DOI https://doi.org/10.21272/jnep.14(1).01024
PACS Number(s) 85.60.Bt, 78.20.Bh, 73.61.Ga
Keywords GAA CNTFET, Modeling (20) , Simulation (34) , Temperature coefficients of electrical parameters.
Annotation

Carbon nanotubes (CNTs) are promising materials for the formation of field-effect transistors (FETs) due to their excellent electrical, thermal, mechanical and other properties. High productivity, low power consumption, minimization of the impact of short-channel effects, etc., are of significant practical interest primarily to coaxial CNTFETs. This paper presents the results of numerical simulation of coaxial gate-all-around (GAA) CNTFETs. The structure of GAA CNTFETs is designed using Silvaco TCAD tools and their electrical parameters are investigated. The drift diffusion model of transport, taking into account the Bohm quantum potential, demonstrates excellent characteristics for three-dimensional models, in particular, valid values are obtained for the threshold voltage Vt, subthreshold swing SS, switching current Ion, leakage current Ioff and Ion/Ioff coefficient. The influence of temperature on the specified electrical parameters at low bias voltages is studied and the typical character of temperature dependences for semiconductor devices is obtained. It is established that the values of the threshold voltage Vt and subthreshold swing SS decrease and increase, respectively, with increasing temperature from 250 to 500 K. Along with this, there is a slight decrease in the switching current by 1.6 % in a given temperature range at the source voltage VDD = – 1.0 V. The thermal stability of coaxial structures of nanotransistors with a channel in the form of a single-walled CNT is evaluated by the temperature coefficients βVt, βSS, βIon and βIoff, which at VDS = 0.10 V are respectively 3.2·10 – 4 K – 1, 3.2·10 – 3 K – 1, – 6.2·10 – 5 K – 1 and 1.0·10 – 4 K – 1.

List of References