Repercussions Through Inclusion of Multi Bridge Channels into Gate All Around Nano-Wire Field Effect Transistor

Authors S. Ashok Kumar , J. Soundararajan, P. Mahendra Peruman, J. Susmitha, K. Krishnaprasath

Department of Electronics and Communication Engineering, Sri Manakula Vinayagar Engineering College, Puducherry, India

Issue Volume 15, Year 2023, Number 5
Dates Received 28 July 2023; revised manuscript received 16 October 2023; published online 30 October 2023
Citation S. Ashok Kumar, J. Soundararajan, P. Mahendra Peruman, et al., J. Nano- Electron. Phys. 15 No 5, 05019 (2023)
PACS Number(s) 85.30.Tv

A 3 channel rectangular Gate All Around Nano-Wire Multi Bridge Channel Field Effect Transistor (GAA NWMBCFET) is introduced in this work by integrating multi bridge channel into Gate All Around Nano-wire Field Effect Transistor (GAA NWFET) with increased drain current and enhanced Short Channel Effect (SCE) suppression for a gate length of 35 nm. Gate capacitance increases significantly due to vertically stacked channels enclosed by the gate. To understand the characteristics and behavior of the proposed GAA NWMBCFET, a rigorous analysis was conducted using a reliable physical model: the temperature-dependent carrier transport model (DD). Within this analysis, the Mobility Model (MM) played a crucial role in incorporating the effects of doping concentration and electric field. Additionally, the Bandgap Narrowing Model (BNM) and the Shockley-Read-Hall recombination Model (SRM) were instrumental in addressing carrier lifetime concerns. Utilizing Synopsys Sentaurus Technology Computer Aided Design (TCAD) facilitated the simulation of our proposed model, enabling a thorough examination of its characteristics. The rectangular multi bridge channel device exhibit 2.3 times better drain current than the rectangular nano-wire transistor. In addition, the Ultra Thin Body (UTB) in the device inhibits Sub threshold Swing (SS) and Drain Induced Barrier Lowering (DIBL) which contributes to minimized off current. The current drive has a 28 % increase for LG  5 nm than GAA NWFET. Furthermore, to ensure a comprehensive understanding of the device behavior, a detailed analysis of trans conductance was performed for a gate length of 35 nm. Additionally, analyses were extended to gate lengths of 5 nm, enabling a thorough evaluation of both GAA NWMBCFET and GAA NWFET.

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