Measurement of Very Small Variation of Effective Resistance of MOSFET Deputed in Active Microgrid Inverter Operation
| Authors | S.S. Ghosh1 , S. Chattopadhyay2 , R.V.V. Krishna3, Ranjan Kumar Mahapatra4, A. Das1 , Sudipta Das5 |
| Affiliations |
1Department of Electrical Engineering, Jadavpur University, Kolkata, West Bengal, India 2Department of Electrical Engineering, GKCIET, Malda, West Bengal, India 3Department of Electronics and Communication Engineering, Aditya College of Engineering & Technology, Aditya Nagar, ADB Road, Surampalem, 533437, A.P., India 4Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Green Fileds, Vaddeswaram, 522302, A.P. India 5Department of Electronics and Communication Engineering, IMPS College of Engineering and Technology, Malda-732103, West Bengal, India |
| Е-mail | ssghosh732103@gmail.com |
| Issue | Volume 16, Year 2024, Number 3 |
| Dates | Received 13 April 2024; revised manuscript received 19 June 2024; published online 28 June 2024 |
| Citation | S.S. Ghosh, S. Chattopadhyay, et al., J. Nano- Electron. Phys. 16 No 3, 03029 (2024) |
| DOI | https://doi.org/10.21272/jnep.16(3).03029 |
| PACS Number(s) | 85.30.Tv |
| Keywords | Fast Fourier Transform (FFT), Fault identification, H-bridge inverter (HBI), Microgrid (MG), MOSFET (31) , PV system. |
| Annotation |
Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are essential components of conventional power electronic converters used in microgrid (MG) inverter systems because of their efficiency, quick switching, and compact size. Microgrid inverters (MGIs) are vital to distributed energy systems (DESs), converting DC electricity from renewable sources into AC. An H-bridge inverter (HBI) in MG operation permits bidirectional power flow, enabling both grid-tied and independent operation. A MOSFET fault in SPHBI may cause a change in the MOSFET's effective resistance (MER). Reliability, safety, and performance of the MG system can all be negatively impacted by MOSFET failures in an H-bridge inverter. An effective fault detection system should be included in the MGI to lessen the impact of MOSFET failures. An approach to detecting a prompt MOSFET switch failure (MSF) in a single-phase H-bridge MG inverter associated with a photovoltaic (PV) system is presented in this article. To identify MSF, the SPHBI’s output current was analyzed using the Fast Fourier Transform (FFT). For varying fault levels, the effects of MSF on the DC component (DCC), fundamental current component (FCC), Total Harmonic Current Distortion (THCD), and subharmonics (SHs) have been studied. Based on the best-fit attributes, an attempt has been made to successfully recognize the MSF that also enables the measurement of MER during MSF. Furthermore, an algorithm for MSF detection has been suggested. |
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List of References |
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