Combined (Si) and (Ge) FinFET-CMOS Inverter Characterization Based on Driver to Load Transistor Ratio

Authors Yasir Hashim , Safwan Mawlood Hussein

Department of Computer Engineering, Faculty of Engineering, Tishk International University (TIU) – Erbil, Kurdistan Region, Iraq

Issue Volume 14, Year 2022, Number 5
Dates Received 07 August 2022; revised manuscript received 20 October 2022; published online 28 October 2022
Citation Yasir Hashim, Safwan Mawlood Hussein, J. Nano- Electron. Phys. 14 No 5, 05003 (2022)
PACS Number(s) 62.23.Hj, 87.85.Dh
Keywords FinFET (17) , CMOS (18) , Transistor (11) , Inverter (2) , Transfer characteristics.

This paper proposes a novel method to adaptively select the best driver to load transistor fin ratio of CMOS FinFET logic inverter according to the best values of noise margins and inflection voltage with a comparison of the use of different and combined Si and Ge as a load and/or driver semiconductor channel in CMOS FinFET inverter logic circuit. The methodology of optimizing the driver to load transistor fin ratio depends strongly on improving the noise margins and inflection voltage of the output characteristics of CMOS logic inverter. The first step in this investigation of CMOS-FinFET-inverter is to obtain the output characteristics (Id-Vd) of the FinFET, and then use the MATLAB simulation model to create CMOS FinFET transfer characteristics. Transfer characteristics of CMOS-FinFET-logic inverter are studied with fin ratios Np/Nn of 5/1, 4/1, 3/1,2/1, 1/1, 1/2, 1/3, 1/4, 1/5. Noise margins and inflection voltage are used as critical factors to obtain the optimal fin ratio (Np/Nn). The results indicate that optimization depends strongly on the fin ratio for all combined semiconductor loads to FinFET driver inverters. The results show that the best ratios for Si:Si, Si:Ge, Ge:Si, and G:Ge are 2:1, 1:4, 2:1, and 1:3 respectively.

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