Low Voltage Symmetric Dual-Gate Organic Field Effect Transistor

Authors Imad Benacer1, Fateh Moulahcene1, Fateh Bouguerra2, Ammar Merazga1

1Institute of Science and Applied Technology (SAT Institute), University Of Oum El Bouaghi, Algeria

2Department of Electronics, University of Batan 2, Batna, Algeria

Е-mail benacerimad@gmail.com
Issue Volume 15, Year 2023, Number 2
Dates Received 05 December 2022; revised manuscript received 21 April 2023; published online 27 April 2023
Citation Imad Benacer, Fateh Moulahcene, Fateh Bouguerra, Ammar Merazga, J. Nano- Electron. Phys. 15 No 2, 02012 (2023)
DOI https://doi.org/10.21272/jnep.15(2).02012
PACS Number(s) 85.30.Tv
Keywords Organic Field Effect Transistors (OFET), Low voltage, Single-gate (SG), Dual-gate (DG), Symmetric (2) , Numerical simulation (4) .

Dual-gate organic field effect transistors (DG-OFETs), where two separate channels are formed at the organic semiconductor-dielectric interface, have attracted much attention owning to their high performance in comparison to single-gate OFET (SG-OFET). In this paper, an organic module of Atlas device simulator for a low voltage SG-OFET has been used to predict the electrical characteristics and performance parameters. Thereafter, an additional dielectric and gate electrode has been introduced to SG-OFET to achieve better performance. Electrical behaviors of low-voltage (≤3V) DG-OFET have been studied by employing a symmetric configuration. This architecture exhibits a high drive current due to injection of sufficient charge carriers in both channels. The simulation results show higher drive current, carrier mobility and current on-off ratio, lower threshold voltage and subthreshold slope. These results demonstrate that the proposed symmetric configuration provide better performance when compared to the single gate.

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