A Graphical Method to Study Electrostatic Potentials of 25 nm Channel Length DG SOI MOSFETs

Authors M. Djerioui, M. Hebali , D. Chalabi , A. Saidane
Affiliations

Labo.CaSiCCE ENP d’Oran, B.P 1523 Oran El M’Naouar 31000, Algeria

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Issue Volume 10, Year 2018, Number 4
Dates Received 10 May 2018; revised manuscript received 10 August 2018; published online 25 August 2018
Citation M. Djerioui, M. Hebali, D. Chalabi, A. Saidane, J. Nano- Electron. Phys. 10 № 4, 04027 (2018)
DOI https://doi.org/10.21272/jnep.10(4).04027
PACS Number(s) 85.30.De
Keywords Symmetrical DG SOI MOSFET, Poisson’s equation (4) , Electrostatic potential, Numerical method.
Annotation

To determine electrostatic potentials in silicon channel of undoped DG SOI MOSFET devices, a graphical approach is proposed. The method keeps close to experimental reality by taking into account flat band potential at reduced channel lengths up to 25 nm. This graphical method solves a transcendental equation of Poisson’s equation to obtain electrostatic potentials at center and surface of device as a function gate and drain bias voltages.

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