Temperature Impact on the Characteristics of N-Channel GaP Fin Field Effect Transistor (GaP-FinFET)

Authors Y. Hashim

Tishk International University, Computer Engineering Department, Erbil, Kurdistan Region, Iraq

Е-mail yasir.hashim@tiu.edu.iq
Issue Volume 16, Year 2024, Number 1
Dates Received 04 January 2024; revised manuscript received 18 February 2024; published online 28 February 2024
Citation Y. Hashim, J. Nano- Electron. Phys. 16 No 1, 01018 (2024)
DOI https://doi.org/10.21272/jnep.16(1).01018
PACS Number(s) 62.23.Hj, 87.85.Dh
Keywords GaP (43) , FinFET (16) , N-Channel, Temperature (46) , Sensor (27) .

This study analyzes the effects of temperature on transfer characteristics, threshold voltage, ION/IOFF ratio, drain induced barrier lowering (DIBL), and sub-threshold swing (SS) in N-Channel Gallium Phosphide (GaP) Fin Fied Effect Transistor (FinFET). GaP-FinFET's temperature properties have been studied using the (MuGFET) simulation tool. Because of the lower ION/IOFF ratio, higher DIBL, and higher SS at higher temperatures, the results show a detrimental impact of increased working temperature on the use of GaP-FinFET in electronic circuits, such as digital circuits and amplifier circuits. Furthermore, the best situation for using a transistor as a temperature nano-sensor is when it is in the ON state.

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