Numerical Simulation of Field-effect Transistor GAA SiNWFET Parameters Based on Nanowires

Authors І.P. Buryk1, M.M. Ivashchenko1 , A.O. Holovnia2, L.V. Odnodvorets2

1Konotop Institute of Sumy State University, 24, Myru Ave., 41615 Konotop, Ukraine

2Sumy State University, 2, Rymsky-Korsakov St., 40007 Sumy, Ukraine

Issue Volume 12, Year 2020, Number 6
Dates Received 15 July 2020; revised manuscript received 21 December 2020; published online 25 December 2020
Citation І.P. Buryk, M.M. Ivashchenko, A.O. Holovnia, L.V. Odnodvorets, J. Nano- Electron. Phys. 12 No 6, 06012 (2020)
PACS Number(s) 85.30.De, 85.30.Tv, 73.40.Qv
Keywords SOI GAA SiNWFETs, Nanowire (12) , Short-channel effects (2) , Temperature effects.

A perspective way for further increase in MOSFET transistors scaling value is the usage of Si, GaAs, ZnO nanowires and carbon nanotubes as channels between the source and drain. In this work, we present the results of a numerical simulation of 3D transistors with five n-type Si (SiNWFETs) channels based on SOI (Silicon-on-Insulator) technology and Gate-all-around (GAA) structure. 5-channel GAA SiNWFET structures are simulated by Silvaco TCAD tools. Their distinct electrical characteristics are demonstrated, in particular, the valid values of threshold voltage Vt, subthreshold scattering SS, drain induced barrier lowering (DIBL), leakage current Ioff and Ion/Ioff coefficient are obtained. The effect of temperature on static transmission characteristics is studied. A typical view of the MOSFET dependencies is obtained: the intersection of operating characteristics for different temperatures at a constant drain voltage due to a decrease in the switch-on current and threshold voltage Vt, the corresponding decrease in charge carrier mobility and energy redistribution of carriers, the Fermi energy shift to the middle of the band gap and the formation of a depleted region near the semiconductor surface at lower values of the electric field strength. At a fixed drain voltage of 1.2 V a further temperature increase in the range of 280-400 K leads to a decrease in the threshold voltage Vt by 22.5 %, an increase in the subthreshold scattering SS by 43.1 %, a decrease in the switch-on current by 10.7 % and a decrease in DIBL by 12.6 %.

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