Authors | Koutayba Alnama, Abdulkader Jazmati |
Affiliations |
Department of Physics, Atomic Energy Commission of Syria, P.O. Box 6091, Damascus, Syria |
Е-mail | pscientific21@aec.org.sy |
Issue | Volume 13, Year 2021, Number 6 |
Dates | Received 11 March 2021; revised manuscript received 10 December 2021; published online 20 December 2021 |
Citation | Koutayba Alnama, Abdulkader Jazmati, J. Nano- Electron. Phys. 13 No 6, 06012 (2021) |
DOI | https://doi.org/10.21272/jnep.13(6).06012 |
PACS Number(s) | 62.23.Hj, 87.85.Dh |
Keywords | Optogalvanic, Effective lifetime, Neon, Plasma properties, Hollow cathode. |
Annotation |
Time resolved optogalvanic (OG) signals of 1s4-2p8 (650.65 nm) and 1s3-2p7 (653.29 nm) transitions have been studied in neon DC plasma. Numerical fit of the signals based on four-term rate equation model has been used to elucidate the contributions to the signal from four 1si levels. Evolution of decay rates of four 1si neon states as a function of discharge current has been studied. The dominant discharge processes for the first transition were photoionization and impact ionization, while for the second transition – the metastable-metastable collisional ionization mechanism was added to the previously mentioned mechanisms to produce the OG signal. The effective lifetimes of the 1si states have been determined for both transitions, where 2 ms is found for the resonance state 1s2, while the 1s3,4,5 have an almost equivalent effective lifetime of 40 ms. The long effective lifetime of all 1s2,4 states in comparison with their radiative lifetimes is attributed to the radiation trapping effect. The contribution of the 1si states to the OG signals has been studied. 1s3 state involvement was most important in the 1s3-2p7 transition signal, while the 1s4 state has a large contribution to the 1s4-2p8 transition signal. |
List of References |