Authors | Yousif Atalla1, Mohamad Hafiz Mamat1, Yasir Hashim2 |
Affiliations |
1NANO-ElecTronic Centre (NET), School of Electrical Engineering, College of Engineering, Universiti Teknologi MARA, 40450, Shah Alam, Selangor, Malaysia 2Department of Electrical Engineering and Computer Science, A‘Sharqiyah University, Ibra, Oman |
Е-mail | yasir.hashim@ieee.org |
Issue | Volume 17, Year 2025, Number 2 |
Dates | Received 14 February 2025; revised manuscript received 10 April 2025; published online 28 April 2025 |
Citation | Yousif Atalla, Mohamad Hafiz Mamat, Yasir Hashim, [footnoteRef:], J. Nano- Electron. Phys. 17 No 2, 02011 (2025) |
DOI | https://doi.org/10.21272/jnep.17(2).02011 |
PACS Number(s) | 62.23.Hj, 87.85.Dh |
Keywords | SiGe-FinFET, Temperature (46) , Sensitivity (11) , MuGFET (3) , Nano-sensor. . |
Annotation |
This study focuses on the effect of temperature on the sensitivity of Metal-Oxide Semiconductor (MOS) transistors and FinFET devices using a Si0.75Ge0.25 heterostructure, through the analysis of current-voltage (I-V) characteristics under different thermal conditions. To investigate the mode coupling within MOS transistors by analyzing the performance of FinFET transistors under a range of different thermal conditions and gate lengths (Lg = 10, 20, and 30 nanometers). The results showed that FinFET transistors achieve the highest thermal sensitivity when the largest change in current (ΔI) occurs within the voltage range of 0 to 1 volt (VDD), reflecting high efficiency in responding to thermal changes. It was also found that reducing the channel length leads to a significant increase in thermal sensitivity, especially in the length range of 10 to 20 nanometers. The optimal channel length was determined to be 10 nanometers to achieve superior thermal performance, serving as a benchmark for designing FinFET transistors that require high thermal efficiency and stability across various applications. The study included a wide range of temperatures, providing an enhanced understanding of the design. |
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