Semiholographic Approach in Calculation of Tunneling Current in Graphene with Deep Impurities
| Authors | M.B. Belonenko1,2 , N.N. Konobeeva1 |
| Affiliations | 1 Volgograd State University, 400062 Volgograd, Russia 2 Laboratory of Nanotechnology, Volgograd Institute of Business, 400048 Volgograd, Russia |
| Е-mail | belonenko@volsu.ru, yana_nn@volsu.ru |
| Issue | Volume 8, Year 2016, Number 4 |
| Dates | Received 18 June 2016; revised manuscript received 22 November 2016; published online 29 November 2016 |
| Citation | M.B. Belonenko, N.N. Konobeeva, J. Nano- Electron. Phys. 8 No 4(1), 04029 (2016) |
| DOI | 10.21272/jnep.8(4(1)).04029 |
| PACS Number(s) | 73.20. At, 73.22.Pr |
| Keywords | Tunneling current, Deep impurity, Semiholographic approach. |
| Annotation | In this paper, we investigated the influence of deep impurity in graphene on the tunneling current in the contact with a metal. A ballistic current in graphene was calculated. The dependence of current-voltage characteristic of the contact on transition energy between the impurity and the graphene was analyzed. |
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List of References |
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