Semiholographic Approach in Calculation of Tunneling Current in Graphene with Deep Impurities

Authors M.B. Belonenko1,2 , N.N. Konobeeva1
Affiliations

1 Volgograd State University, 400062 Volgograd, Russia

2 Laboratory of Nanotechnology, Volgograd Institute of Business, 400048 Volgograd, Russia

Е-mail belonenko@volsu.ru, yana_nn@volsu.ru
Issue Volume 8, Year 2016, Number 4
Dates Received 18 June 2016; revised manuscript received 22 November 2016; published online 29 November 2016
Citation M.B. Belonenko, N.N. Konobeeva, J. Nano- Electron. Phys. 8 No 4(1), 04029 (2016)
DOI 10.21272/jnep.8(4(1)).04029
PACS Number(s) 73.20. At, 73.22.Pr
Keywords Tunneling current, Deep impurity, Semiholographic approach.
Annotation In this paper, we investigated the influence of deep impurity in graphene on the tunneling current in the contact with a metal. A ballistic current in graphene was calculated. The dependence of current-voltage characteristic of the contact on transition energy between the impurity and the graphene was analyzed.

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