Effects of High-k Dielectrics with Metal Gate for Electrical Characteristics of SOI TRI-GATE FinFET Transistor

Authors Fatima Zohra Rahou, A.Guen Bouazza, B. Bouazza
Affiliations

Department of Electronic and Electrical Engineering, Faculty of Technology, University of Abou-Bekr Belkaid, Tlemcen, Algeria

Е-mail f_rahou@yahoo.fr
Issue Volume 8, Year 2016, Number 4
Dates Received 22 April 2016; revised manuscript received 22 November 2016; published online 29 November 2016
Citation Fatima Zohra Rahou, A.Guen Bouazza, B. Bouazza, J. Nano- Electron. Phys. 8 No 4(1), 04037 (2016)
DOI 10.21272/jnep.8(4(1)).04037
PACS Number(s) 85.30.Tv
Keywords Technology SOI, Short-channel effects (SCEs), Multi-gate SOI MOSFET, SOI TRI-GATE FinFET, High-k dielectric (2) , Silvaco Software.
Annotation The implementation of high-k gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components. From the simulation result; it was shown that HfO2 is the best dielectric material with metal gate TiN, which giving better subthreshold swing (SS), drain-induced barrier lowing (DIBL), leakage current Ioff and Ion/Ioff ratio.

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