Effect of High-k Oxide on Double Gate Transistor Embedded in RF Colpitts Oscillator

Authors M. Bella1, S. Latreche1, C. Gontrand2
Affiliations

1 Université frères Mentouri Constantine, Laboratoire d’Hyperfréquence et Semi-Conducteurs, Département d’Electronique Constantine, Algeria

2 Institut de Nanotechnologies de Lyon (INL), University Lyon1, Lyon, France

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Issue Volume 8, Year 2016, Number 4
Dates Received 15 June 2016; published online 29 November 2016
Citation M. Bella, S. Latreche, C. Gontrand, J. Nano- Electron. Phys. 8 No 4(1), 04022 (2016)
DOI 10.21272/jnep.8(4(1)).04022
PACS Number(s) 85.30.Pq, 85.30.Tv
Keywords DGMOS transistor, Radio-frequency (2) , Mixed-mode simulation, Phase noise ISF funcfion.
Annotation The Linear Time Variant (LTV) model of phase noise is considered. It is based on the Impulse Sensitivity Function (ISF) which describes carefully the sensitivity of an oscillator to a parasite impulse current injection in different nodes of the circuit. The obtained results pointed out that the ISF function is sinusoidal and its period is nearly the same of the oscillator output signal for different dielectric oxide. It also states that the phase noise of a Colpitts oscillator is not affected by the use of the high-k materials. Finally this method, if extended, is a good tool to investigate a perturbation response on such circuits.

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