Low-temperature Minimum in the Electrical Resistivity of the Bi1.9Lu0.1Te3

Authors O.N. Ivanov , M.N. Yaprintsev , R.A. Lyubushkin , O.N. Soklakova
Affiliations

Belgorod State University, 85, Pobedy st., 308015 Belgorod, Russia

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Issue Volume 8, Year 2016, Number 4
Dates Received 08 September 2016; published online 29 November 2016
Citation O.N. Ivanov, M.N. Yaprintsev, R.A. Lyubushkin, O.N. Soklakova, J. Nano- Electron. Phys. 8 No 4(1), 04036 (2016)
DOI 10.21272/jnep.8(4(1)).04036
PACS Number(s) 72.10.Fk, 72.15. – v
Keywords Electrical resistivity (3) , Bi1 (2) , 9Lu0 (2) , 1Te3 alloy, Electron mobility, Hopping conductivity.
Annotation The temperature dependence of the specific electrical resistivity, ρ, of the Bi1.9Lu0.1Te3 alloy has been studied within the temperature 2 ÷ 230 K interval. Minimum in the resistivity was found at temperature Tm  11 K. This minimum is originated from a change of conductivity mechanism. Above Tm, the resistivity ρ increases as temperature increases. This behavior is due to the electron mobility decrease via an acoustic phonon scattering at heating. Below Tm, the variable-range hopping conductivity based on electron tunneling takes place. In this case, ρ increases as temperature decreases. Two electric field regimes of the hopping conductivity were observed in the resistivity versus electric field strength dependences.

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