Possibility of Application of Topological Consideration for Grain Boundaries in Nanosilicon Films

Authors N.G. Nakhodkin, T.V. Rodionova

Taras Shevchenko National University of Kyiv, 64/13, Volodymyrska st., 01601 Kyiv, Ukraine

Е-mail rodtv@univ.kiev.ua
Issue Volume 8, Year 2016, Number 4
Dates Received 12 September 2016; published online 23 December 2016
Citation N.G. Nakhodkin, T.V. Rodionova, J. Nano- Electron. Phys. 8 No 4(2), 04084 (2016)
DOI 10.21272/jnep.8(4(2)).04084
PACS Number(s) 68.37.Ps, 68.55._a
Keywords Nanosilicon films, Grain boundary structure, Atomic force microscopy (9) , Grain boundary faceting.
Annotation A comparative analysis of the experimentally observed by atomic force microscopy grain boundary structure of nanosilicon films with the existing model representations was carried out. It is shown that the topological model of structural changes may be used for the analysis of changes of grain boundary structure only for films with equiaxial structure. For films with fibrous structure topological model is unacceptable because of the large number of multiple joints grain boundaries and grain boundaries faceting.