Electron and Positron State in Layered Nanostructures «Metal – Insulator»

Authors А.V. Babich, P.V. Vakula, А.V. Korotun, V.I. Reva , V.V. Pogosov

Zaporizhzhya National Technical University, 64, Gogol st., 69063 Zaporizhzhya, Ukraine

Е-mail andko@zntu.edu.ua
Issue Volume 8, Year 2016, Number 4
Dates Received 14 July 2016; published online 29 November 2016
Citation А.V. Babich, P.V. Vakula, А.V. Korotun, et al., J. Nano- Electron. Phys. 8 No 4(1), 04050 (2016)
DOI 10.21272/jnep.8(4(1)).04050
PACS Number(s) 73.30. + y, 71.60. + z
Keywords Metal nanofilm, Electronic states (2) , The metal-dielectric contact, The Schottky barrier, Density functional method, Positron states, Annihilation characteristics.

Within the framework of modified method of Kohn-Sham and stable jelly model with taking into account image forces and conduction band profiles of the dielectric self-consistent calculations of potential profiles, and the work functions, the Schottky barriers for asymmetric metal dielectric film systems in which insulators on both sides of the metal nanofilms are different were done. Dielectric environment generally leads to negative changes in the electron work function and surface energy. In view of the conduction band of the dielectric (solid inert gases, ) dimensional effects, the impact of effective mass to energy and positron annihilation characteristics in layered structures with self-consistent hybrid potential profiles, which built in the local density approximation and crosslinked with image potentials were investigated. The possibility of localization of positronium atoms in nanosandvich is discussed. Comparison with the experiments were done.

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