The Spectrum of Transverse Acoustic Phonons in Planar Multilayer Semiconductor Nanostructures
| Authors | I.V. Boyko1 , A.M. Gryschuk2 |
| Affiliations | 1 Ternopil National Technical University, 56, Ruska st., 46001 Ternopil, Ukraine 2 Zhytomyr Ivan Franko State University, 40, Velyka Berdichevska st., 10033 Zhytomyr, Ukraine |
| Е-mail | boyko.i.v.theory@gmail.com |
| Issue | Volume 8, Year 2016, Number 4 |
| Dates | Received 04 July 2016; published online 29 November 2016 |
| Citation | I.V. Boyko, A.M. Gryschuk, J. Nano- Electron. Phys. 8 No 4(1), 04001 (2016) |
| DOI | 10.21272/jnep.8(4(1)).04001 |
| PACS Number(s) | 73.21.Fg, 68.65.Ac, 68.65.Cd |
| Keywords | Quantum cascade laser (3) , Quantum cascade detector, Resonant tunnel structure, Acoustic phonons, Transfer matrix. |
| Annotation | Based on the elastic continuum model, the theory of displacement of acoustic phonons spectra, arising in flat semiconductor nanostructures, was developed. For the studied resonant tunneling structure, which can be an active element of a quantum cascade laser or detector, the spectrum of acoustic phonons modes has been calculated. The dependences of the acoustic phonon spectrum from geometric parameters of studied nanostructure were set. The results obtained in the paper can be used to further theoretical studies of the electrons interaction with the transverse acoustic phonons in multilayer semiconductor nanosystems. |
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