A Two Dimensional Surface Potential Model for Triple Material Double Gate Junctionless Field Effect Transistor

Authors A. Kumar , A. Chaudhry, V. Kumar, V. Sharma
Affiliations

UIET, Panjab University, Sector-14, Chandigarh, India

Е-mail ajaymoudgil01@gmail.com
Issue Volume 8, Year 2016, Number 4
Dates Received 23 September 2016; revised manuscript received 22 November 2016; published online 29 November 2016
Citation A. Kumar, A. Chaudhry, V. Kumar, V. Sharma, J. Nano- Electron. Phys. 8 No 4(1), 04042 (2016)
DOI 10.21272/jnep.8(4(1)).04042
PACS Number(s) 85.30.Tv
Keywords Triple Material Double Gate (TMDG), Junctionless field effect transistor (JLFET), Surface Potential (9) , Centre potential.
Annotation In this paper, a two dimensional analytical Surface Potential model for the triple material double gate (TMDG) junctionless-field effect transistor (JLFET) in sub-threshold region has been presented. The effect of source and drain depletion width has also been taken into account. We have solved two-dimensional Poisson’s equation for the Surface Potential. Then the centre potential and the electric field is also obtained. We have calculated the surface potential for different channel lengths. All the modelled results are then compared with the simulated results of the 2D device simulator TCAD.

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