Optical and Structural Characterization of Pin Photodetector Based on Germanium Nanocrystals for Third Generation Solar Cells

Authors K.K. Sossoe1, , M.M. Dzagli1, K.S. Gadedjisso-Tossou1, A.M. Mohou1, B. Grandidier2

1 Laboratoire de Physique des Composants à Semi-conducteurs (LPCS), Département de Physique, Faculté des Sciences, Université de Lomé, BP 1515 Lomé, Togo

2 Equipe Physique des Nanostructures et Composants Quantiques à l’Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), IEMN CNRS, France

Е-mail kodjo_sossoe@yahoo.fr
Issue Volume 8, Year 2016, Number 4
Dates Received 08 October 2016; published online 29 November 2016
Citation K.K. Sossoe, M.M. Dzagli, K.S. Gadedjisso-Tossou, et al., J. Nano- Electron. Phys. 8 No 4(1), 04035 (2016)
DOI 10.21272/jnep.8(4(1)).04035
PACS Number(s) 61.72.uf, 68.37.Hk, 68.37.Ef, 71.15. – m, 73.63.Kv, 81.07.Bc
Keywords Germanium nanocrystals (2) , Photodetector (7) , Renewable energy, Scanning tunneling spectroscopy, Solar cells (15) .
Annotation We investigated the structural and optoelectronic properties of p-n germanium nanocrystals based junctions embedded between GaAs substrate and layers of ZnO:Al or a-Si:H. Scanning electron microscopy and scanning tunneling microscopy were used on these junctions in this work. Calculations of tunneling current on the substrate showed effect of localized defects trapping Fermi level at the surface tending to make a semi-insulating substrate. The average value of the diameter of the Ge nanoparticle is around 12.5 nm. These results lay the foundation for the development of solar cells which active part is made of GeNCs.