Strain Energy of the Electron Polaron in Quantum Dot InAs / GaAs

Authors V.I. Hrushka, R.M Peleschchak
Affiliations

I. Franko State Pedagogil University, 3, Stryiska st., 82100 Drogobych, Ukraine

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Issue Volume 8, Year 2016, Number 4
Dates Received 12 July 2016; published online 23 December 2016
Citation V.I. Hrushka, R.M Peleschchak, J. Nano- Electron. Phys. 8 No 4(2), 04068 (2016)
DOI 10.21272/jnep.8(4(2)).04068
PACS Number(s) 73.00.00, 73.20. – r
Keywords Quantum dot (12) , Bind energy, Polaron (3) , Electron (70) , Deformad potential.
Annotation Considered hard nanoheterosystems InAs/GaAs spherical quantum dots of InAs. It is shown that in this system there are deformation fields, which arise at the interface quantum dot-matrix and lead to increased polaronic effects compared to nedefinovanej materials. The calculated binding energy of deformation electron polaron in a tense nanoheterosystems InAs/GaAs. It is established that the deformation of the material of the quantum dot and the matrix leads to an increase of the binding energy of the electronic polaron.

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