Strain Energy of the Electron Polaron in Quantum Dot InAs / GaAs
| Authors | V.I. Hrushka, R.M Peleschchak |
| Affiliations | I. Franko State Pedagogil University, 3, Stryiska st., 82100 Drogobych, Ukraine |
| Е-mail | |
| Issue | Volume 8, Year 2016, Number 4 |
| Dates | Received 12 July 2016; published online 23 December 2016 |
| Citation | V.I. Hrushka, R.M Peleschchak, J. Nano- Electron. Phys. 8 No 4(2), 04068 (2016) |
| DOI | 10.21272/jnep.8(4(2)).04068 |
| PACS Number(s) | 73.00.00, 73.20. – r |
| Keywords | Quantum dot (12) , Bind energy, Polaron (3) , Electron (76) , Deformad potential. |
| Annotation | Considered hard nanoheterosystems InAs/GaAs spherical quantum dots of InAs. It is shown that in this system there are deformation fields, which arise at the interface quantum dot-matrix and lead to increased polaronic effects compared to nedefinovanej materials. The calculated binding energy of deformation electron polaron in a tense nanoheterosystems InAs/GaAs. It is established that the deformation of the material of the quantum dot and the matrix leads to an increase of the binding energy of the electronic polaron. |
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List of References |
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