CNTFET-Based Design of a High-Efficient Full Adder Using XOR Logic
| Authors | Seyedehsomayeh Hatefinasab |
| Affiliations | Payame Noor University of Sari, Panzdah khordad Str., Sari, Iran |
| Е-mail | hatefinasab@gmail.com |
| Issue | Volume 8, Year 2016, Number 4 |
| Dates | Received 27 May 2016; revised manuscript received 19 December 2016; published online 23 December 2016 |
| Citation | Seyedehsomayeh Hatefinasab, J. Nano- Electron. Phys. 8 No 4(2), 04061 (2016) |
| DOI | 10.21272/jnep.8(4(2)).04061 |
| PACS Number(s) | 88.30.rh |
| Keywords | CNTFET (9) , Full adder (2) , Low power, XOR logic, PDP (Power Delay Product). |
| Annotation | This paper presents a new low power and high speed full adder based on Carbon Nano Tube Field Effect Transistor (CNTFET) technology. This proposed full adder is based on a XOR logic function using 32 nm CNTFET technology. The MOSFET-like CNTFET is applied in this paper to use CMOS (Complementary Metal Oxide Semiconductor) logic gate. The better structure of CNTFET transistors can improve the performance of full adder based on CNTFET technology [1]. The proposed full adder is simulated in different frequencies, various supply voltages, temperatures and load capacitances to prove better performance in different conditions using the Synopsys HSPICE simulator software in comparison with previous full adders in CNTFET technology. |
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List of References |
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