Modeling of Schottky Barrier Height and Volt-Amper Characteristics for Transition Metal-solid Solution (SіC)1 – x(AlN)x
| Authors | V.I. Altukhov, B.A. Bilalov , A.V. Sankin, S.V. Filipova |
| Affiliations | North-Caucasian Federal University Branch in Pyatigorsk, 56, 40 let Oktyabrya ave., 357500 Pyatigorsk, Russia |
| Е-mail | |
| Issue | Volume 8, Year 2016, Number 4 |
| Dates | Received 15 May 2016; published online 29 November 2016 |
| Citation | V.I. Altukhov, B.A. Bilalov, A.V. Sankin, S.V. Filipova, J. Nano- Electron. Phys. 8 No 4(1), 04003 (2016) |
| DOI | 10.21272/jnep.8(4(1)).04003 |
| PACS Number(s) | 73.30. + y, 85.30.Hi |
| Keywords | Schottky barrier (8) , Silicon carbide (9) , Solid solutions (2) , Volt-amper characteristics, Metal-semiconductor transitions. |
| Annotation | Proposed nonlinear defect concentration model of metal-semiconductor contact. It is shown that taking into account nonlinear dependence of the Fermi energy EF defect concentration leads to higher barrier Schottky in 15-25 %. Calculated Volt-Amper characteristics of the diodes are consistent with experiment. |
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List of References |
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