Modeling of Schottky Barrier Height and Volt-Amper Characteristics for Transition Metal-solid Solution (SіC)1 – x(AlN)x

Authors V.I. Altukhov, B.A. Bilalov , A.V. Sankin, S.V. Filipova
Affiliations

North-Caucasian Federal University Branch in Pyatigorsk, 56, 40 let Oktyabrya ave., 357500 Pyatigorsk, Russia

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Issue Volume 8, Year 2016, Number 4
Dates Received 15 May 2016; published online 29 November 2016
Citation V.I. Altukhov, B.A. Bilalov, A.V. Sankin, S.V. Filipova, J. Nano- Electron. Phys. 8 No 4(1), 04003 (2016)
DOI 10.21272/jnep.8(4(1)).04003
PACS Number(s) 73.30. + y, 85.30.Hi
Keywords Schottky barrier (8) , Silicon carbide (9) , Solid solutions (2) , Volt-amper characteristics, Metal-semiconductor transitions.
Annotation Proposed nonlinear defect concentration model of metal-semiconductor contact. It is shown that taking into account nonlinear dependence of the Fermi energy EF defect concentration leads to higher barrier Schottky in 15-25 %. Calculated Volt-Amper characteristics of the diodes are consistent with experiment.

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