Investigation of Nanostructure Phase Composition and Field Emission Properties in the Ge/Si (100) System

Authors S.A. Nepijko1,2, A.A. Sapozhnik1 , A.G. Naumovets3, Yu.N. Kozyrev3,4, M. Klimenkov5, S.I. Protsenko2, L.V. Odnodvorets2 , I.Yu. Protsenko2

1 Institute of Physics, University of Mainz, 7, Staudingerweg, 55128 Mainz, Germany

2 Sumy State University, 2, Rymskyi-Korsakov Str., 40007 Sumy, Ukraine

3 Institute of Physics, National Academy of Sciences of Ukraine, 46, Nauky Prosp., 03028 Kyiv, Ukraine

4 Institute of Surface Chemistry, National Academy of Sciences of Ukraine, 17, General Naumov Str., 03164 Kiev, Ukraine

5 Institute for Applied Materials, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany

Issue Volume 8, Year 2016, Number 4
Dates Received 25 November 2016; published online 23 December 2016
Citation S.A. Nepijko, A.A. Sapozhnik, A.G. Naumovets, et al., J. Nano- Electron. Phys. 8 No 4(2), 04067 (2016)
DOI 10.21272/jnep.8(4(2)).04067
PACS Number(s) 73.22. – f; 73.21.La; 81.15.Hi
Keywords Heterostructures (2) , Phase Composition (3) , Solid Solution (6) , Pseudomorphic layers, Emission Properties (2) .
Annotation We analyzed the Ge/Si(100) phase composition based on existing literature data and results obtained with high-resolution electron microscopy method. The research confirms formation of solid solutions Ge(Si) in the Ge film and the Si(Ge) in the Si (100) substrate, which are separated by a thin pseudomorphic layer. This conclusion can correctly interpret the phase composition of the heterostructure based on Ge and Si. An array of tips developing on the interface with the tip density of the order 1014 m–2 was visualized. The emission properties of the tips were studied, including electric field strength near their peaks reaching 109 V/m, which causes cold emission.