Authors | V.V. Starkov1, S.A. Legotin2, A.A. Krasnov2 , V.N. Murashev2, Yu.K. Omel’chenko2, O.I. Rabinovich2, A.S. Laryushkin3 |
Affiliations | 1 Institute of Technology microelectronics and high purity materials, Russian Academy of Sciences, 6, Institutskaya St. 142432 Chernogolovka, Russia 2 NUST “MISiS”, 4, Leninskiy Prosp., 119049 Moscow, Russia 3 JSC "Optocoupler" 105187, Shcherbakovskaya St., 53, Moscow, Russia |
Е-mail | |
Issue | Volume 7, Year 2015, Number 4 |
Dates | Received 29 September 2015; published online 10 December 2015 |
Citation | V.V. Starkov, S.A. Legotin, A.A. Krasnov, et al., J. Nano- Electron. Phys. 7 No 4, 04047 (2015) |
DOI | |
PACS Number(s) | 00.05.Tp, 85.60.Jb |
Keywords | Betavoltic effect of power beta source (2) , Design optimization (3) , Silicon converter. |
Annotation | The paper presents the first results of experimental research on the microchannel structures of betavoltaic silicon converters based on the 63Ni isotope. The areas for further optimization of constructive and technological performance with high conversion efficiency were detected experimentally. |
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