Microchannel Structures of Betavoltaic Silicon Convertors

Authors V.V. Starkov1, S.A. Legotin2, A.A. Krasnov2 , V.N. Murashev2, Yu.K. Omel’chenko2, O.I. Rabinovich2, A.S. Laryushkin3
Affiliations

1 Institute of Technology microelectronics and high purity materials, Russian Academy of Sciences, 6, Institutskaya St. 142432 Chernogolovka, Russia

2 NUST “MISiS”, 4, Leninskiy Prosp., 119049 Moscow, Russia

3 JSC "Optocoupler" 105187, Shcherbakovskaya St., 53, Moscow, Russia

Е-mail
Issue Volume 7, Year 2015, Number 4
Dates Received 29 September 2015; published online 10 December 2015
Citation V.V. Starkov, S.A. Legotin, A.A. Krasnov, et al., J. Nano- Electron. Phys. 7 No 4, 04047 (2015)
DOI
PACS Number(s) 00.05.Tp, 85.60.Jb
Keywords Betavoltic effect of power beta source (2) , Design optimization (3) , Silicon converter.
Annotation The paper presents the first results of experimental research on the microchannel structures of betavoltaic silicon converters based on the 63Ni isotope. The areas for further optimization of constructive and technological performance with high conversion efficiency were detected experimentally.

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