Properties Study of ZnS Thin Films Prepared by Spray Pyrolysis Method

Authors A. Djelloul1, 2 , , M. Adnane1, Y. Larbah1, T. Sahraoui1, C. Zegadi1, A. Maha2, B. Rahal3

1 Laboratory of Electron Microscopy and Materials Sciences University of Science and Technology of Oran, B.P. 1505, 31000 El-Mnaouer Oran, Algeria

2 Centre de Recherche en Technologie des Semi-Conducteurs pour l’Energétique ‘CRTSE’ 02 Bd Frantz Fanon. B.P. 140, 7 Merveilles, Alger, Algérie

3 Nuclear Research Center of Algiers (CRNA), 2 Bd., Frantz Fanon, BP 399, Algiers 16000, Algeria

Issue Volume 7, Year 2015, Number 4
Dates Received 07 October 2015; published online 10 December 2015
Citation A. Djelloul, M. Adnane et al., J. Nano- Electon. Phys. Vol. 7 No 4, 04045 (2015)
PACS Number(s) 81.05.Dz, 78.66.Hf, 61.05.Cp, 78.66. – Hf
Keywords ZnS (26) , Spray Pyrolysis (9) , DRX, UV-VIS (10) , Band gap (29) .
Annotation Zinc sulfide (ZnS) is important II-VI semiconductors material for the development of various modern technologies and photovoltaic applications. ZnS thin film was prepared by using chemical spray pyrolysis technique. The starting solution is a mixture of 0.1 M zinc chloride as source of Zn and 0.05 M thiourea as source of S. The glass substrate temperature was varied in the range of 300 °C-400 °C to investigate the influence of substrate temperature on the structure, chemical composition, morphological and optical properties of ZnS films. The DRX analyses indicated that ZnS films have polycrystalline cubic structure with (111) preferential orientation and grain size varied from 25 to 60 nm, increasing with substrate temperature. The optical properties of these films have been studied in the wavelength range 300-2500 nm using UV-VIS spectro-photometer. The ZnS films has a band gap of 3.89 eV-3.96 eV.

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