Model of Band Diagram LED White Light in the System of GaN/InGaN
| Authors | Yu.P. Holovaty1, V.G. Kosushkin1 , N.A. Khahaev1, D.A. Romanov1, L.M. Chervyakov2, E.K. Naimi3, S.L. Kozhitov3 |
| Affiliations | 1 Bauman Moscow State Technical University, 5, 2-ya Baumanskaya St., 105005 Moskow, Russia 2 South-West State University, 94, 50 let Oktyabrya St., 305040 Kursk, Russia 3 National University of Science and Technology «MISiS», 4, Leninsky Pr., 119049 Moscow, Russia |
| Е-mail | |
| Issue | Volume 7, Year 2015, Number 4 |
| Dates | Received 01 October 2015; published online 24 December 2015 |
| Citation | Yu.P. Holovaty, V.G. Kosushkin, N.A. Khahaev, et al., J. Nano- Electron. Phys. 7 No 4, 04069 (2015) |
| DOI | |
| PACS Number(s) | 61.72.uj, 79.60.Bm |
| Keywords | Nitride indium-gallium (InGaN), LED simulation, The band diagram, Semiconductors (25) . |
| Annotation | The results of the research of semiconductor multilayer nanostructures suitable for making white light LEDs in the GaN/InGaN with red, green and blue emission spectra formed in a single chip. The methodology and the calculation of the energy levels, the wave functions of the carriers, the electric fields caused by the spontaneous polarization and the piezoelectric effect, the spontaneous emission spectrum and chromaticity coordinates of the total radiation. |
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List of References |
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