The Spectral Sensitivity Characteristics Simulation of the Silicon p-i-n-structure with High Resistance

Authors S.A. Legotin1 , V.N. Murashev1 , S.Yu. Yurchuk1 , V.P. Yaromskiy2 , V.P. Astahov1 , K.A. Kuz’mina1 , O.I. Rabinovich1 , D.S. El’nikov1 , U.V. Osipov1 , A.A. Krasnov1 , S.I. Didenko1

1 NUST “MISiS”, 4, Leninskiy Prosp., 119040 Moscow, Russia

2 JSC "Scientific, Research & Production Corporation of Measuring Equipment", 2, Pioneer St., 141074 Moscow region, Korolev, Russia

Issue Volume 7, Year 2015, Number 4
Dates Received 29 September 2015; published online 10 December 2015
Citation S.A. Legotin, V.N. Murashev, S.Yu. Yurchuk, et al., J. Nano- Electron. Phys. 7 No 4, 04017 (2015)
PACS Number(s) 00.05.Tp, 85.60.Jb
Keywords Silicon p-i-n structure, Design optimization (3) .
Annotation In the paper a simulation program for photovoltaic parameters of semiconductor devices and results of their investigation are presented. The results of the program usage based on an example of calculating the influence of the high-resistance "well" thickness in the silicon p-i-n-diode spectral response are discussed. For the accuracy of the program estimation it was compared the theoretical spectral characteristics of a silicon PIN-diode 5 kOhm substrate with the experimental data.

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