The Temperature Changes of the Energy Characteristics of the Surface Layer of InAs Quantum Dots in GaAs Matrix

Authors	S.K. Guba¹, V.N. Yuzevich¹^,²^,³
Affiliations	¹ Lviv Polytechnic National University, 12, S. Bandery St., 79013 Lviv, Ukraine ² Physicomechanical Institute by name G. Karpenko, Nat. Acad. Sci. of Ukraine, 5, Naukova St., 79060 Lviv, Ukraine ³ Kujawsko Pomorska Szkola Wyżcza w Bydgoszczy, 55-57, Torunska St., 85-023 Bydgoszcz, Poland
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Issue	Volume 7, Year 2015, Number 4
Dates	Received 14 September 2015; revised manuscript received 04 November 2015; published online 24 December 2015
Citation	S.K. Guba, V.N. Yuzevich, J. Nano- Electron. Phys. 7 No 4, 04065 (2015)
DOI
PACS Number(s)	68.65. Hb, 81.10.Aj
Keywords	Quantities dots, Self-organization (5) , Energy characteristics of surface layers, GaAs / In / InAs system.
Annotation	The work developed a theoretical model for calculating the surface energy characteristics of quantum dots (QD) InAs in the GaAs matrix when the temperature of self-organization. The stated theoretical model allows the calculation of interfacial energy and adhesion parameters InAs QDs in GaAs matrix when the temperature of self-organization. The calculated results provide an opportunity to explore (analyze) the characteristics of interfacial layers at the QD InAs / WL In, WL In / GaAs, QD InAs / GaAs substrate (WL – wetting layer of metal). They can be used for analysis - identifying common patterns of change in the energy parameters of QD InAs in a matrix GaAs (100). In addition, they are useful for modeling changes in the energy characteristics of the surface layers, which characterize the relationship between the mechanisms of relaxation of elastic stresses and the surface energy of GaAs / In / InAs system.
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