Nanoelectronics. Spin transport in the NEGF method and quantum spin Hall effect by «bottom-up» approach

Authors Yu.A. Kruglyak1 , P.A. Kondratenko2 , Yu.М. Lopatkin3

1 Odessa State Environmental University 15, Lvivska st., 65016 Odessa, Ukraine

2 National Aviation University, 1, Komarov ave., 03058 Kyiv, Ukraine

3 Sumy State University, 2, Rimskiy-Korsakov st., 40007 Sumy, Ukraine

Issue Volume 7, Year 2015, Number 4
Dates Received 31 August 2015; published online 24 December 2015
Citation Yu.A. Kruglyak, P.A. Kondratenko, Yu.М. Lopatkin, J. Nano- Electron. Phys. 7 No 4, 04102 (2015)
PACS Number(s) 05.60.Gg, 72.25. – b, 73.43. – f, 85.30.Fg, 85.35. – p
Keywords Nanophysics, Nanoelectronics (3) , Molecular electronics, Bottom–up, Spin transport, Spin valve, Spin precession, Spin Hamiltonians, Zeeman splitting, Rashba effect, Spinors, Quantum spin Hall effect, QSHE, NEGF (4) .
Annotation Spin transport with the NEGF method in the spinor representation, in particular, spin valve, rotating magnetic contacts, spin precession and rotating spins, Zeeman and Rashba spin Hamiltonians, quantum spin Hall effect, calculation the spin potential, and four-component description of transport are discussed in the frame of the «bottom – up» approach of modern nanoelectronics.

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