Theoretical Analysis of Optical Gain in GaN / AlxGa1 – x N Quantum Well Lasers
| Authors | K. Fellaoui, D. Abouelaoualim , A. Elkadadra , A. Oueriagli |
| Affiliations | LPSCM, Department of Physics Faculty of Sciences Semlalia Cadi Ayaad University P.O. Box 2390, 40000 Marrakech, Morocco |
| Е-mail | |
| Issue | Volume 7, Year 2015, Number 4 |
| Dates | Received 01 July 2015; published online 24 December 2015 |
| Citation | K. Fellaoui, D. Abouelaoualim, A. Elkadadra, A. Oueriagli, J. Nano- Electron. Phys. 7 No 4, 04061 (2015) |
| DOI | |
| PACS Number(s) | 73.21.Fg, 42.55.Px |
| Keywords | III-Nitride, AlGaN / GaN quantum wells (QWs), Optical gain (2) , Laser diodes. |
| Annotation | In this study, we investigated numerically the effect of aluminum concentration, temperature and well width on optical gain GaN / AlxGa1 – xN quantum well lasers, taken into account effective mass approximation. The numerical results clearly show that the increasing of well width, and decreasing of temperature and Aluminum concentration, the optical gain increases. |
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List of References |
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