Production of the Volume Composite Based on Bi2Te3-SiO2 Nanoparticles and its Electroconductivity

Authors	M.N. Yapryntsev¹ , R.A. Lyubushkin¹, E.N. Alifanova¹, O.N. Ivanov¹ , L.V. Malikov²
Affiliations	¹ Belgorod State National Research University, the Center for collective use of scientific equipment “The diagnosis of the structure and properties of nanomaterials”, Pobedy Str., 85, 308015 Belgorod, Russia ² Scientific Center of Physical Technologies, 6, Svobody Sq., 61022 Kharkiv, Ukraine
Е-mail	yaprintsev@bsu.edu.ru
Issue	Volume 7, Year 2015, Number 4
Dates	Received 01 October 2015; revised manuscript received 09 November 2015; published online 10 December 2015
Citation	M.N. Yapryntsev, R.A. Lyubushkin, E.N. Alifanova, et al., J. Nano- Electron. Phys. 7 No 4, 04040 (2015)
DOI
PACS Number(s)	65.80. – g, 82.60.Qr, 73.40.Gk
Keywords	Bismuth telluride (2) , Solvotermal microwave synthesis, Morphology (8) , The tunnel type of conductivity.
Annotation	The nanoparticles of Bi2Te3-SiO2 were synthesized by microwave solvotermal recovery of oxide precursors of bismuth and tellurium with simultaneous hydrolysis of tetraethylorthosilicate (TEOS). The compacting was carried out by method of cold isostatic pressing with the following sintering. The resulting system can be regarded as a thermoelectric semiconductor material containing structural inhomogeneities in the form of inclusions with a low thermal conductivity – SiO2. It was proved that composite is a single-phase bismuth telluride uniformly distributed in the bulk of amorphous silicon dioxide. It was also found that the tunnel type of conductivity is realized in the obtained material at temperatures from about 50 to 180 K.
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