Results (52):

Title Effects of Interfacial Charges on Doped and Undoped HfOx Stack Layer with Tin Metal Gate Electrode for Nano-Scaled CMOS Generation
Authors S. Chatterjee, Y. Kuo
Issue Volume 3, Year 2011, Number 1, Part 1
Pages 0162 - 0169
Title Effect of Grain Size on the Threshold Voltage for Double-Gate Polycrystaline Silicon MOSFET
Authors Mahesh Chandra, Alka Panwar, B.P. Tyag
Issue Volume 3, Year 2011, Number 1, Part 3
Pages 0474 - 0478
Title Two Dimensional Analytical Modeling for SOI and SON MOSFET and Their Performance Comparison
Authors Saptarsi Ghosh, Khomdram Jolson Singh, Sanjay Deb, Subir Kumar Sarkar
Issue Volume 3, Year 2011, Number 1, Part 3
Pages 0569 - 0575
Title Two-Dimensional Analytical Modeling of Threshold Voltage of Doped Short-Channel Triple-Material Double-Gate (Tm-Dg) MOSFET's
Authors Sarvesh Dubey, Dheeraj Gupta, Pramod Kumar Tiwari, S. Jit
Issue Volume 3, Year 2011, Number 1, Part 3
Pages 0576 - 0583
Title Pt-Ti/ALD-Al2O3/p-Si MOS Capacitors for Future ULSI Technology
Authors Ashok M. Mahajan, Anil G. Khairnar, Brian J. Thibeault
Issue Volume 3, Year 2011, Number 1, Part 4
Pages 0647 - 0650
Title Metal-Semiconductor Field-Effect Transistors Fabricated Using DVT Grown n-MoSe2 Crystals With Cu-Schottky Gates
Authors C.K. Sumesh, K.D. Patel, V.M. Pathak, R.Srivastava
Issue Volume 3, Year 2011, Number 1, Part 4
Pages 0709 - 0713
Title Strategic Review of Arsenide, Phosphide and Nitride MOSFETs
Authors Gourab Dutta, Palash Das, Partha Mukherjee, Dhrubes Biswas
Issue Volume 3, Year 2011, Number 1, Part 4
Pages 0728 - 0740
Title MoSe2 / Polyaniline Solar Cells
Authors H.S. Patel, J.R. Rathod, K.D. Patel, V.M. Pathak, R. Srivastava
Issue Volume 3, Year 2011, Number 1, Part 4
Pages 0741 - 0746
Title Electrostatics of Silicon Nano Transistor
Authors Lalit Singh, B.P. Tyag
Issue Volume 3, Year 2011, Number 1, Part 4
Pages 0808 - 0813
Title A 2-D Analytical Threshold Voltage Model for Symmetric Double Gate MOSFET's Using Green’s Function
Authors Anoop Garg, S.N. Sinha, R.P. Agarwal
Issue Volume 3, Year 2011, Number 1, Part 5
Pages 0894 - 0902
Title Role of Interface Charges on High-k Based Poly-Si and Metal Gate Nano-Scale MOSFETs
Authors N. Shashank, Vikram Singh, W.R. Taube, R.K. Nahar
Issue Volume 3, Year 2011, Number 1, Part 5
Pages 0937 - 0941
Title High-k HfO2 Based Metal-Oxide-Semiconductor Devices Using Silicon and Silicon Carbide Semiconductor
Authors N.P. Maity, A. Pandey, S. Chakraborty, M. Roy
Issue Volume 3, Year 2011, Number 1, Part 5
Pages 0947 - 0955
Title A Doping Dependent Threshold Voltage Model of Uniformly Doped Short-Channel Symmetric Double-Gate (DG) MOSFET’s
Authors P.K. Tiwari, S. Dubey, S. Jit
Issue Volume 3, Year 2011, Number 1, Part 5
Pages 0963 - 0971
Title Porous Silicon & Titanium Dioxide Coatings Prepared by Atmospheric Pressure Plasma Jet Chemical Vapour Deposition Technique-A Novel Coating Technology for Photovoltaic Modules
Authors S. Bhatt, J. Pulpytel, F. Krcma, V. Mazankova, F. Arefi-Khonsari
Issue Volume 3, Year 2011, Number 1, Part 5
Pages 1021 - 1034
Title Effect of Drift Region Doping and Coulmn Thickness Variations in a Super Junction Power MOSFET: a 2-D Simulation Study
Authors Deepti Sharma, Rakesh Vaid
Issue Volume 3, Year 2011, Number 1, Part 5
Pages 1112 - 1119
Title Channel Length Effect on Subthreshold Characteristics of Junctionless Trial Material Cylindrical Surrounding-Gate MOSFETs with High-k Gate Dielectrics
Authors Fairouz Lagraf,, Djamil Rechem, Kamel Guergouri, Mourad Zaabat
Issue Volume 4, Year 2012, Number 1
Pages 02011-1 - 02011-5
Title Channel Length Effect on Subthreshold Characteristics of Junctionless Trial Material Cylindrical Surrounding-Gate MOSFETs with High-k Gate Dielectrics
Authors Fairouz Lagraf,, Djamil Rechem, Kamel Guergouri, Mourad Zaabat
Issue Volume 4, Year 2012, Number 1
Pages 01001-1 - 01001-5
Title Channel Length Effect on Subthreshold Characteristics of Junctionless Trial Material Cylindrical Surrounding-Gate MOSFETs with High-k Gate Dielectrics
Authors Fairouz Lagraf,, Djamil Rechem, Kamel Guergouri, Mourad Zaabat
Issue Volume 4, Year 2012, Number 1
Pages 01001-1 - 01001-1
Title Design and Implementation of a Hybrid SET-CMOS Based Sequential Circuits
Authors Anindya Jana, Rajatsuvra Halder, J.K. Sing, Subir Kumar Sarkar
Issue Volume 4, Year 2012, Number 2
Pages 02004-1 - 02004-5
Title Prospects of III-Vs for Logic Applications
Authors U.P. Gomes, Y.K. Yadav, S. Chowdhury,  K. Ranjan, S. Rathi, D. Biswas
Issue Volume 4, Year 2012, Number 2
Pages 02009-1 - 02009-5
Title Performance of a Double Gate Nanoscale MOSFET (DG-MOSFET) Based on Novel Channel Materials
Authors Rakesh Prasher, Devi Dass, Rakesh Vaid
Issue Volume 5, Year 2013, Number 1
Pages 01017-1 - 01017-5
Title A Comparative Performance Study of Hybrid SET-CMOS Based Logic Circuits for the Estimation of Robustness
Authors Biswabandhu Jana, Anindya Jana, Jamuna Kanta Sing, Subir Kumar Sarkar
Issue Volume 5, Year 2013, Number 3
Pages 03057-1 - 03057-6
Title Comparison of Atomic Level Simulation Studies of MOSFETs Containing Silica and Lantana Nanooxide Layers
Authors K. Bikshalu, M.V. Manasa, V.S.K. Reddy, P.C.S. Reddy, K. Venkateswara Rao
Issue Volume 5, Year 2013, Number 4
Pages 04058-1 - 04058-3
Title Design and Analysis of a High Speed, Power Efficient 8 Bit ALU Based on SOI / SON MOSFET Technology
Authors Subhramita Basak, Anindya Jana, Subir Kumar Sarkar
Issue Volume 5, Year 2013, Number 4
Pages 04062-1 - 04062-5
Title Synthesis of the Carbon Nanomaterials Based on Renewable Bioresources
Authors N.A. Chan, V.V. Chakov, A.P. Kuzmenko, S.G. Emelyanov,L.M. Chervyakov, M.B. Dobromyslov
Issue Volume 6, Year 2014, Number 3
Pages 03026-1 - 03026-4
Title Influence of Magnetic Pulseprocessing on Oxide Materials Physics and Mechanical Properties
Authors M.N. Shipko, V.V. Korovushkin, A.V. Smagina, V.G. Kostishyn, L.V. Kozhitov
Issue Volume 6, Year 2014, Number 3
Pages 03060-1 - 03060-5
Title Sensing Properties of Gas Sensor Based on Adsorption of NO2 with Defect, Pristine, Fe and Si-MoS2 Layer
Authors S.R. Shakil, S.A. Khan
Issue Volume 6, Year 2014, Number 4
Pages 04004-1 - 04004-3
Title Analysis of Voltage Transfer Characteristics of Nano-scale SOI CMOS Inverter with Variable Channel Length and Doping Concentration
Authors A. Daniyel Raj, C. Rajarajachozhan, Sanjoy Deb
Issue Volume 7, Year 2015, Number 1
Pages 01004-1 - 01004-4
Title The Formation and Study of the FeCo Nanoparticles Alloy in Structure of Metal-Carbon Nanocomposites FeCo/C
Authors L.V. Kozhitov, M.F. Bulatov, V.V. Korovushkin, V.G. Kostishin, D.G. Muratov, M.N. Shipko, S.G. Emelyanov, E.V. Yakushko
Issue Volume 7, Year 2015, Number 4
Pages 04103-1 - 04103-5
Title An Analytical Universal Model for Symmetric Double Gate Junctionless Transistors
Authors N. Bora, P. Das, R. Subadar
Issue Volume 8, Year 2016, Number 2
Pages 02003-1 - 02003-4
Title Efficient Design of Reversible Code Converters Using Quantum Dot Cellular Automata
Authors Javeed Iqbal Reshi, M. Tariq Banday
Issue Volume 8, Year 2016, Number 2
Pages 02042-1 - 02042-8
Title The Structure and Physical Properties of Composites Formed from Molybdenum Sulfide
Authors L.S. Yablon, I.М. Budzulyak, M.V. Karpets, V.V. Strelchuk, S.I. Budzulyak, I.P. Yaremiy, О.М. Hemiy, О.V. Morushko
Issue Volume 8, Year 2016, Number 2
Pages 02029-1 - 02029-7
Title Magnetic Properties and Local Parameters of Crystal Structure for BaFe12O19 and SrFe12O19 Hexagonal Ferrites
Authors M.N. Shipko, V.G. Kostishyn, V.V. Korovushkin, I.M. Isaev, M.A. Stepovich, A.I. Tikhonov, E.S. Savchenko
Issue Volume 8, Year 2016, Number 3
Pages 03004-1 - 03004-4
Title Effect of High-k Oxide on Double Gate Transistor Embedded in RF Colpitts Oscillator
Authors M. Bella, S. Latreche, C. Gontrand
Issue Volume 8, Year 2016, Number 4
Pages 04022-1 - 04022-7
Title Effects of High-k Dielectrics with Metal Gate for Electrical Characteristics of SOI TRI-GATE FinFET Transistor
Authors Fatima Zohra Rahou, A.Guen Bouazza, B. Bouazza
Issue Volume 8, Year 2016, Number 4
Pages 04037-1 - 04037-4
Title Comparative Analysis of CNTFET and CMOS Logic based Arithmetic Logic Unit
Authors K. Nehru, T. Nagarjuna, , G. Vijay,
Issue Volume 9, Year 2017, Number 4
Pages 04018-1 - 04018-4
Title Simulation and Performance Analysis of 32 nm FinFet based 4-Bit Carry Look Adder
Authors S. Rashid, S. Khan, A. Singh,
Issue Volume 9, Year 2017, Number 5
Pages 05003-1 - 05003-4
Title Numerical Simulation and Mathematical Modeling of 3D DG SOI MOSFET with the Influence of Biasing with Back Gate
Authors Neha Goel, Manoj Kumar Pandey
Issue Volume 9, Year 2017, Number 5
Pages 05002-1 - 05002-4
Title Analytical Modeling & Simulation of OFF-State Leakage Current for Lightly Doped MOSFETs
Authors Nitin Sachdeva, Munish Vashishath, P.K. Bansal
Issue Volume 9, Year 2017, Number 6
Pages 06009-1 - 06009-4
Title HIFU Transducers Designs and Ultrasonic Treatment Methods for Biological Tissues
Authors A.N. Rybyanets, I.A. Shvetsov, S.A. Shcherbinin, E.I. Petrova, N.A. Shvetsova
Issue Volume 10, Year 2018, Number 2
Pages 02043-1 - 02043-3
Title A Graphical Method to Study Electrostatic Potentials of 25 nm Channel Length DG SOI MOSFETs
Authors M. Djerioui, M. Hebali, D. Chalabi, A. Saidane
Issue Volume 10, Year 2018, Number 4
Pages 04027-1 - 04027-4
Title An Analytical Modeling of Drain Current for Single Material Surrounded Gate Nanoscale SOI MOSFET
Authors Arjimand Ashraf, Prashant Mani
Issue Volume 10, Year 2018, Number 4
Pages 04012-1 - 04012-5
Title A New Electro-Thermal Modeling of Low Voltage Power MOSFET with Junction Tempera-ture Dependent Foster (RC) Thermal Network
Authors Smail Toufik, Dibi Zohir
Issue Volume 10, Year 2018, Number 4
Pages 04017-1 - 04017-5
Title Charge Based Quantization Model for Triple-Gate FINFETS
Authors P. Vimala
Issue Volume 10, Year 2018, Number 5
Pages 05015-1 - 05015-5
Title PSpice Implementation and Simulation of a New Electro-Thermal Modeling for Estimating the Junction Temperature of Low Voltage Power MOSFET
Authors Toufik Smail, Zohir Dibi, Douadi Bendib
Issue Volume 10, Year 2018, Number 6
Pages 06004-1 - 06004-5
Title Role of TCO Films in Improving the Efficiency of CdS/MoS2 Heterojunction Solar Cells
Authors B. Zaidi, M.S. Ullah, B. Hadjoudja, S. Gagui, N. Houaidji, B. Chouial, C. Shekhar
Issue Volume 11, Year 2019, Number 2
Pages 02030-1 - 02030-4
Title Channel Length Effect on Subthreshold Characteristics of Junctionless Trial Material Cylindrical Surrounding-Gate MOSFETs with High-k Gate Dielectrics
Authors Fairouz Lagraf,, Djamil Rechem,, Kamel Guergouri,, Mourad Zaabat,
Issue Volume 11, Year 2019, Number 2
Pages 02011-1 - 02011-5
Title An Ultra-low Power, High SNM, High Speed and High Temperature of 6T-SRAM Cell in 3C-SiC 130 nm CMOS Technology
Authors D. Berbara, M. Abboun Abid, M. Hebali, M. Benzohra, D. Chalabi
Issue Volume 12, Year 2020, Number 4
Pages 04024-1 - 04024-4
Title Optimization of n-MOS 6T Nanowire SRAM Bit Cell Based on Nanowires Ratio of SiNWTs
Authors Yasir Hashim, Waheb A. Jabbar
Issue Volume 12, Year 2020, Number 5
Pages 05020-1 - 05020-4
Title Single Electron Transistor Based Current Mirror: Modelling and Performance Characterization
Authors Ashok.D. Vidhate, Shruti Suman
Issue Volume 13, Year 2021, Number 1
Pages 01017-1 - 01017-5
Title Growth of Gold Nanostructures on the MoS2 Surface Modified with Polyvinylpyrrolidone
Authors T.I. Borodinova, V.I. Styopkin, A.A. Vasko, V.V. Cherepanov, V.G. Kravets
Issue Volume 13, Year 2021, Number 1
Pages 01018-1 - 01018-4
Title Effect of ZrO2 Dielectric over the DC Characteristics and Leakage Suppression in AlGaN/InGaN/GaN DH MOS-HEMT
Authors V. Sandeep, J. Charles Pravin
Issue Volume 13, Year 2021, Number 4
Pages 04007-1 - 04007-5