An Ultra-Low-Power and High Sensibility of the Smart CMOS (Si and 4H-SiC) Temperature Sensor in 130nm Technology
| Authors | M. Hebali1,2, B. Ibari1 , M. Bennaoum1 , M. Berka1 , M. El-A. Beyour1, A. Maachou1 |
| Affiliations |
1Department of Electrotechnical, University Mustapha STAMBOULI Mascara, 29000 Mascara, Algeria 2Laboratory: CaSiCCe, ENP Oran-MA, 31000 Oran, Algeria |
| Е-mail | mourad.hebali@univ-mascara.dz |
| Issue | Volume 15, Year 2023, Number 6 |
| Dates | Received 05 October 2023; revised manuscript received 20 December 2023; published online 27 December 2023 |
| Citation | M. Hebali, B. Ibari, et al., J. Nano- Electron. Phys. 15 No 6, 06011 (2023) |
| DOI | https://doi.org/10.21272/jnep.15(6).06011 |
| PACS Number(s) | 85.30.Tv, 85.35. – p |
| Keywords | Si (560) , 4H-SiC, Temperature (46) , Smart Sensor, CMOS (18) . |
| Annotation |
One of the many applications of CMOS technology is the design the temperature sensors. In this paper, the electrical performance of smart CMOS (Si and 4H-SiC) temperature sensor in 130 nm technology has been studied using OrCAD PSpice software. The proposed CMOS circuit is developed to provide the first smart temperature sensor based on two different semiconductor technologies (Si and 4H-SiC) integrated on the same chip. These technologies are activated separately according to the temperature range (Low and High). The study of this smart sensor have shown that they operate under a low voltage less than 0.8 V and ultra-low power of order nW. In addition, it is characterized by high sensitivity and good linearity across a temperature range from 120 °C to 500 °C. It is expected that the use of Si and 4H-SiC technologies for both temperature ranges (low and high) respectively will increase the life of this sensor. |
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