Effect of Channel Material on the Performance Parameters of GAA MOSFET

Authors Jeevanarao Batakala, Rudra Sankar Dhar

Department of Electronics and Communication Engineering, National Institute of Technology Mizoram, Aizawl 796012, Mizoram, India

Е-mail rdhar@uwaterloo.ca
Issue Volume 14, Year 2022, Number 2
Dates Received 13 December 2021; revised manuscript received 16 April 2022; published online 29 April 2022
Citation Jeevanarao Batakala, Rudra Sankar Dhar, J. Nano- Electron. Phys. 14 No 2, 02003 (2022)
DOI https://doi.org/10.21272/jnep.14(2).02003
PACS Number(s) 81.07.Gf, 85.30.Tv
Keywords Gate all around (GAA), Subthreshold slope (SS), Nanowire material, Metal oxide semiconductor (MOS), Analog frequency.

The paper proposes an analysis of the characteristics of a cylindrical nanowire field effect transistor for two channel materials, namely Si and GaAs. The performance curves of Si and GaAs nanowire MOSFETs (GAA-NW-MOSFETs) in the 20 nm region are investigated via structure simulator called ATLAS. The simulation results show that the Si device has a much better threshold voltage and subthreshold swing, but the GaAs device has the best ION/IOFF current ratio and less drain-induced barrier-lowering (DIBL). Furthermore, performance characteristics of analog devices such as drain current, transconductance, as well as output conductance, subthreshold slope (SS) and threshold voltage of the device are compared for two different materials (Si and GaAs). It is found that the GaAs material provides reduced drive current and lower leakage current, giving a high ION/IOFF. In terms of SS, the Si material in the device ensures the perfect and stable device performance.

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