Role of TCO Films in Improving the Efficiency of CdS/MoS2 Heterojunction Solar Cells
| Authors | B. Zaidi1 , M.S. Ullah2 , B. Hadjoudja3, S. Gagui3, N. Houaidji3, B. Chouial3, C. Shekhar4 |
| Affiliations |
1Department of Physics, Faculty of Material Sciences, University of Batna 1, Batna, Algeria 2Department of Electrical and Computer Engineering, Florida Polytechnic University, Lakeland, USA 3Laboratory of Semiconductors, Department of Physics, University of Badji-Mokhtar, Annaba, Algeria 4Department of Applied Physics, Amity University Gurgaon, Haryana, 122413 India |
| Е-mail | zbeddiaf@gmail.com |
| Issue | Volume 11, Year 2019, Number 2 |
| Dates | Received 17 December 2018; revised manuscript received 02 April 2019; published online 15 April 2019 |
| Citation | B. Zaidi, M.S. Ullah, B. Hadjoudja, et al., J. Nano- Electron. Phys. 11 No 2, 02030 (2019) |
| DOI | https://doi.org/10.21272/jnep.11(2).02030 |
| PACS Number(s) | 84.60.Jt, 88.40.jm |
| Keywords | CdS/MoS2, Zinc oxide (10) , Lead oxide, Solar cells (17) , Capacitance-voltage (3) , SCAPS-1D (22) . |
| Annotation |
Thin film solar cell is a second generation solar cell that is made by depositing one or more thin layers. Debutant analysis of the parameters impeding the efficiency of the CdS/MoS2 heterojunction based photovoltaic device is the chief novelty of the present report. In this work, we investigated the effect of Transparent Conductive Oxide (TCO) utilizing zinc oxide (ZnO) or lead oxide (PbO) antireflective thin film (ARC) on the characteristics of CdS/MoS2 heterojunction solar cell (short circuit current density Jsc, open circuit voltage VCO, power-voltage (P-V) and capacitance-voltage (С-V)). All these options are implemented in the one-dimensional numerical simulation program SCAPS.The results obtained show that as a result of the use of TCO, the short circuit current density Jsc decreases as a function of the applied voltage for both cells. The decrease in the current density is modest below 0.6 V and sharper above. On the other hand, the power density increases almost linearly to a maximum of ~ 3.83 and 3.29 mW/cm2 for ZnO and PbO TCO, respectively. The variation in the capacitance with the voltage is similar to the variation of the current density for both configurations and we found that the efficiency of ZnO coating solar cells is higher than of cells coated with PbO. |
|
List of References |
Other articles from this number
1) Molecular Dynamics Modeling of Mechanical Properties of Nanocrystalline SiC [02001-1-02001-5]2) X-ray Investigation of SiC Nanostructure on Cu Films [02002-1-02002-4]
3) Effect of Au Dopant on the Structural and Optical Properties of ZnO Thin Films Prepared by CVD [02003-1-02003-4]
4) Performance Dependence of Organic Solar Cells as a Function of Active Layer Thickness, Luminous Intensity and Temperature of Thermal Annealing [02004-1-02004-5]
5) Initiation of the Explosive Crystallization Process in Amorphous Alloys of the Fe-Zr System by Pulse Laser Treatment [02005-1-02005-4]
6) Chalcopyrite Al(Ga, Mn)As2 and AlGa(As, P) Quaternary Semiconductor: A First-principle Study [02006-1-02006-5]
7) Electrical Properties of the Сu2O/Cd1 – xZnxTe Heterostructure [02007-1-02007-5]
8) Defect Pool Numerical Model in Amorphous Semiconductor Device Modeling Program [02008-1-02008-5]
9) Generation of Electromagnetic Oscillations of Submillimeter Range by GazIn1 – zAs Diodes Using Impact Ionization [02009-1-02009-5]
10) Effect of the Annealing Gas and RF Power Sputtering in the Electrical, Structural and Optical Properties of ITO Thin Films [02010-1-02010-7]
11) Channel Length Effect on Subthreshold Characteristics of Junctionless Trial Material Cylindrical Surrounding-Gate MOSFETs with High-k Gate Dielectrics [02011-1-02011-5]
12) Optical Properties of in-situ Chemically Synthesized PANI-TiO2 Nanocomposites [02012-1-02012-5]
13) Visualization of Signal Structure Showing Element Functioning in Complex Dynamic Systems – Cognitive Aspects [02013-1-002013-4]
14) Regularities of Influence of Electron-beam Technology Modes on the Performance Characteristics of Optical Elements [02014-1-02014-7]
15) DC, AC, and Transient Simulation Study of MEMS Cantilever [02015-1-02015-5]
16) Effect of Long-Range Passivation of Impurity Atoms by Surface Dangling Bonds on the Conductivity of Porous Silicon [02016-1-02016-8]
17) The Concentration Measurements of Tellurium Donor Impurity in Lamellar Bismuth Samples by the Time-of-Flight Mass Spectrometry Method [02017-1-02017-4]
18) Lattice Mechanical Properties of Alkaline Earth Metals Calcium and Strontium [02018-1-02018-7]
19) Spin-orbit Splitting of Valence Band in Silicon Whiskers under Strain [02019-1-02019-8]
20) Interrelation between Pyroelectricity and Residual Polarization in Thin Films of a Ferroelectric Polymer with Nanoscale Structure [02020-1-02020-5]
21) New Deconvolution Technique to Improve the Depth Resolution in Secondary Ion Mass Spectrometry [02021-1-02021-5]
22) Relativistic Correction of the Field Emission Current in the Fowler-Nordheim Formalism [02022-1-02022-6]
23) Calculation of Electron Mobility for the Strained Germanium Nanofilm [02023-1-02023-6]
24) A DFT Study of Hydrogen Adsorption on h-BN: Boron Doping Effects [02024-1-02024-5]
25) The Simultaneous Impacts of the p nc-SiOx:H Window Layer Band Gap and the Back Reflection on the Performances of a-Si:H Based Solar Cells [02025-1-02025-5]
26) Crystalline Structure and Physical Properties of High-Entropy Film Alloys [02026-1-02026-6]
27) Structure and Physicomechanical Properties of Superhard Multicomponent Multilayer (TiAlСrY/Zr)/(TiAlСrYN/ZrN) Coatings with Double Modulation Period of the Structure [02027-1-02027-6]
28) Excitonic Properties of Perylene Diimide Based Dyes [02028-1-02028-3]
29) Formation and UV-Vis Studies of Lead Sulfide Nanoparticles [02029-1-02029-4]
30) Physical Features of Double Sided Diffusion of Lithium into Silicon for Large Size Detectors [02031-1-02031-4]
31) Interface Interaction as a Factor of Dielectric Properties of Epoxy-based Composites with Graphite Nanoplatelets [02032-1-02032-5]
32) Modelling of Vibration Sensor Based on Bimorph Structure [02033-1-02033-8]
