Porous Silicon & Titanium Dioxide Coatings Prepared by Atmospheric Pressure Plasma Jet Chemical Vapour Deposition Technique-A Novel Coating Technology for Photovoltaic Modules

Authors S. Bhatt1, J. Pulpytel1 , F. Krcma2, V. Mazankova2, F. Arefi-Khonsari1
1 Laboratoire de Génie des Procédés Plasmas et Traitements de Surfaces (LGPPTS), Université Pierre et Marie Curie (UPMC), ENSCP, 11, Rue Pierre et Marie Curie, 75231, Paris, Cedex 05, France
2 Institute of Physical and Applied Chemistry, Faculty of Chemistry, Brno University of Technology, Purkyňova 118, 612 00, Brno, Czech Republic
Е-mail sudhir_rhyme@yahoo.co.in, jerome-pulpytel@chimie-paristech.fr
Issue Volume 3, Year 2011, Number 1, Part 5
Dates Received 04 February 2011, in final form 02 December 2011, published online 08 December 2011
Citation S. Bhatt, J. Pulpytel, F. Krcma, et al., J. Nano- Electron. Phys. 3 No1, 1021 (2011)
PACS Number(s) 68.37.Hk, 68.37.Ps
Keywords Porous SiO~2, Porous TiO~2, Atmospheric pressure plasma chemical vapour deposition (APCVD), High deposition rate.
Atmospheric Pressure Plasma Jet (APPJ) is an alternative for wet processes used to make anti reflection coatings and smooth substrate surface for the PV module. It is also an attractive technique because of it’s high growth rate, low power consumption, lower cost and absence of high cost vacuum systems. This work deals with the deposition of silicon oxide from hexamethyldisiloxane (HMDSO) thin films and titanium dioxide from tetraisopropyl ortho titanate using an atmospheric pressure plasma jet (APPJ) system in open air conditions. A sinusoidal high voltage with a frequency between 19-23 kHz at power up to 1000 W was applied between two tubular electrodes separated by a dielectric material. The jet, characterized by Tg ~ 600-800 K, was mostly laminar (Re ~ 1200) at the nozzle exit and became partially turbulent along the jet axis (Re ~ 3300). The spatially resolved emission spectra showed OH, N2, N2+ and CN molecular bands and O, H, N, Cu and Cr lines as well as the NO2 chemiluminescence continuum (450-800 nm). Thin films with good uniformity on the substrate were obtained at high deposition rate, between 800 -1000 nm.s-1, and AFM results revealed that coatings are relatively smooth (Ra ~ 2 nm). The FTIR and SEM analyses were better used to monitor the chemical composition and the morphology of the films in function of the different experimental conditions.

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