Effect of ZrO2 Dielectric over the DC Characteristics and Leakage Suppression in AlGaN/InGaN/GaN DH MOS-HEMT
| Authors | V. Sandeep, J. Charles Pravin |
| Affiliations |
Kalasalingam Academy of Research and Education, Virudhunagar, Tamil Nadu, India |
| Е-mail | jcharlespravin@gmail.com |
| Issue | Volume 13, Year 2021, Number 4 |
| Dates | Received 16 April 2021; revised manuscript received 11 August 2021; published online 20 August 2021 |
| Citation | V. Sandeep, J. Charles Pravin, J. Nano- Electron. Phys. 13 No 4, 04007 (2021) |
| DOI | https://doi.org/10.21272/jnep.13(4).04007 |
| PACS Number(s) | 73.40. – c, 85.30.Pq |
| Keywords | AlGaN/GaN, Double heterostructure, MOS-HEMT, InGaN (5) , ZrO2 (4) , Capacitance (8) , Threshold voltage (15) . |
| Annotation |
The device performance of AlGaN/InGaN/GaN Double Heterostructure Metal-Oxide-Semiconductor High Electron Mobility Transistor (DH MOS-HEMT) upon using 10 nm thick Zirconium Dioxide (ZrO2) as dielectric is studied here. Oxide dielectrics play an important role in forming Two-Dimensional Electron Gas (2DEG). An analytical model is proposed for evaluating the charge density, carrier concentration, drain current, transconductance, and gate capacitance of the device. ZrO2 based DH MOS-HEMTs display exceptional performances such as maximum drain current density (IDmax) and transconductance (gmmax) in comparison to InGaN based HEMTs. Due to the high-quality 2DEG ace between ZrO2 and the AlGaN barrier layer, the MOS-HEMT demonstrates excellent carrier concentrations and gate capacitances. Also, electrostatic analysis at various interfaces is carried out and the impact of InGaN layer thickness over the 2DEG enhancement is investigated. An exceptional agreement is formed between the experimental results from the literature and the produced outputs. Incorporating a strong high-k dielectric material like ZrO2 results in an effective leakage suppression in the range of 10 – 7 mA/mm. The results show that the device could be a feasible solution for both high-power switching and microwave applications. |
|
List of References |
Other articles from this number
1) The Mathematical Model of Radio-measuring Frequency Transducer of Optical Radiation Based on MOS Transistor Structures with Negative Differential Resistance [04001-1-04001-6]2) Electrical Characterization and Interface State Density in Au/n-InN/InP Schottky Diode [04002-1-04002-5]
3) Effect of the Spin-orbit Interaction on the Electronic Band Energies in Cadmium Chalcogenides Evaluated within the HSE06-GW Approach [04003-1-04003-5]
4) Improvement of Electrical Properties of Grätzel Cells by Tuning the Dye Layer with CdS/ZnO Junction [04004-1-04004-5]
5) Thickness Dependent Magnetic Study of Fe Thin Films [04005-1-04005-3]
6) Optical and Dispersion Parameters of the Al-doped ZnO Thin Film [04006-1-04006-7]
7) Influence of the NaCl Dielectric Layer on the Electrical Properties of Graphite/n-Cd1 – xZnxTe Schottky Diodes Fabricated by Transferring Drawn Graphite [04008-1-04008-4]
8) Influence of Ionizing Irradiation on Magnetosensitive Transistor Structures [04009-1-04009-4]
9) Magnetostatic Fields in Multilayer Composite Films with a Bimodal Granule Size Distribution [04010-1-04010-5]
10) Luminescent Properties of Electrochemically Etched Gallium Arsenide [04011-1-04011-6]
11) Generator of EEG Delta Rhythms Based on Si Nanowires [04012-1-04012-5]
12) Nanofluids in Cooling Systems and Their Efficiency [04013-1-04013-8]
13) Dielectric Spectroscopy of Ferroelectric Crossbred PVDF-ZnO Polymer Composite Thin Films [04014-1-04014-5]
14) High Pressure Growth Approach for the Preparation of Reduced Graphene Oxide and its Investigation Using Raman Spectroscopy [04015-1-04015-5]
15) Annealing Effects on the Optoelectronic Performance of Au and CuO Nanoparticles Incorporated P3HT/PCBM Solar Cells [04016-1-04016-6]
16) Theoretical Simulations of the Structural Stability, Elastic, Electronic, Magnetic and Thermodynamic Properties of New Half-metallic Cr2GdSn1 – xPbx Alloys [04017-1-04017-7]
17) Study of the Effect of Absorber Layer Thickness of CIGS Solar Cells with Different Band Gap Using SILVACO TCAD [04018-1-04018-5]
18) Structural, Dielectric and AC Conductivity Behavior of Multicomponent TeO2-ZnO-Li2O-Na2O-B2O3 Glasses [04019-1-04019-5]
19) Photoelectric and Electrical Properties of Composite Materials Based on n-InSe and Graphite [04020-1-04020-4]
20) Study of a New Device Structure: Graphene Field Effect Transistor (GFET) [04021-1-04021-5]
21) Effect of Sintering Temperature and Aluminum Concentration on the Hardness, Microstructure and Density of Copper-Aluminum Alloys [04022-1-04022-4]
22) Topological 3D Model of the Functioning of a Dynamic System – Cognitive Estimation of Complexity [04023-1-04023-6]
23) Influence of the Degree of Atomic Hydrogen Passivation of Electrically Active Centers in Cd1 – xZnxTe on the Resolution of Optical Recording of Images with n-p-i-m Nanostructures [04024-1-04024-6]
24) Diagnostic Visualization of Changes in Biological Tissues by Ultrasound method Based on Doppler Effect [04025-1-04025-4]
25) Hydrogen Physisorption on BNC Heterostructures: A Systematic Theoretical Study [04026-1-04026-9]
26) Plural Three-Wave Resonant Interactions in the Transit Section of Two-Stream Superheterodyne FEL with a Longitudinal Electric Field [04027-1-04027-6]
27) Design of Al:ZnO/p-Si Heterojunction Solar Cell Using SCAPS Simulation Program [04028-1-04028-4]
28) Matrix of Photosensitive Elements for Determining the Coordinates of the Source of Optical Radiation [04029-1-04029-6]
29) Numerical Simulation of Field-effect Transistorwith a Channel in the Form of a Nanowire [04030-1-04030-4]
30) The Spectrum of Natural Frequencies of Acoustic Oscillations of a Spherical Quantum Dot with a Multilayer Shell [04031-1-04031-5]
31) Solid-state Dewetting Formation of In/InTe Nanosystem [04032-1-04032-5]
32) Study of the Temperature Coefficient of the Main Photoelectric Parameters of Silicon Solar Cells with Various Nanoparticles [04033-1-04033-5]
33) Electron Beam Technology in Optoelectronic Instrumentation: High-quality Curved Surfaces and Microprofile Creation in Different Geometric Shapes [04034-1-04034-5]
34) Peculiarity of Magnetoresistance of Composite Materials Based on Co and SiO [04035-1-04035-4]
35) Precision Synchronization of Chaotic Optical Systems [04036-1-04036-5]
36) Microstructure Analysis of Friction Stir Welding of Aluminum Alloy 6061 Coated with Copper Nanofilm [04037-1-04037-4]
