Piezoelectric Characteristics of LiNbO3 Thin-film Heterostructures via Piezoresponse Force Microscopy

Authors D.A. Kiselev1 , S.V. Ksenich1, R.N. Zhukov1 , A.S. Bykov1 , M.D. Malinkovich1 , V.V. Shvartsman2, D.C. Lupascu2, Yu.N. Parkhomenko1
Affiliations

1 National University of Science and Technology "MISiS", 4, Leninskiy Pr., 119049 Moscow, Russian Federation

2 Institut für Materialwissenschaft, and Center for Nanointegration Duisburg-Essen (CENIDE), Universität Duisburg-Essen, 15, Universitätsstr., 45141 Essen, Germany

Е-mail dm.kiselev@misis.ru
Issue Volume 5, Year 2013, Number 4
Dates Received 05 August 2013; published online 10 December 2013
Citation D.A. Kiselev, S.V. Ksenich, R.N. Zhukov, A.S. Bykov, M.D. Malinkovich, V.V. Shvartsman, D.C. Lupascu, Yu.N. Parkhomenko, J. Nano- Electron. Phys. 5 No 4, 04041 (2013)
DOI
PACS Number(s) 77.80.Dj, 68.55. – a, 77.55.H –
Keywords LiNbO3 thin film, Piezoresponse force microscopy (4) , Domain structure (3) .
Annotation Electro-optic LiNbO3 thin films were deposited on Si(100) and Si(111) substrates using a radio-frequency magnetron sputtering process. The piezoelectric properties of the LiNbO3 films were investigated using the scanning probe microscopy in the piezoresponse mode. The obtained results show the high degree of grains orientation in polycrystalline structure. The piezoelectric modulus (dzz) was estimated to be 16 pm/V (for LiNbO3 / Si(100)) and 22 pm/V (for LiNbO3 / Si(111)) and the polarization about of 0.37 C·m – 2. These values are larger than those reported previously for LiNbO3 films.

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