“The Thermal Wave” in Technology of Crystal Growth from the Melt

Authors V.G. Kosushkin1 , S.L. Kozhitov2 , Yn.N. Parkhomenko2, L.V. Kozhitov2 , L.M. Cherjakov3

1 Bauman Moscow State Technical University (Branch in Kaluga), 2, Baxhenov Str., 248600 Kaluga, Russia

2 National University of Science and Technology MISiS, 4, Leninskii Pr., 119049 Moscow, Russia

3 Southwest State University, 94, 50 let Oktyabrya, 305040 Kursk, Russia

Issue Volume 5, Year 2013, Number 4
Dates Received 05 August 2013; revised manuscript received 29 November 2013; published online 10 December 2013
Citation V.G. Kosushkin, S.L. Kozhitov, Yn.N. Parkhomenko, et al., J. Nano- Electron. Phys. 5 No 4, 04022 (2013)
PACS Number(s) 61.48.De, 81. – b
Keywords Crystal growth (2) , Analytical solution, Czochralski crystal growth.
Annotation It was found that the temperature fluctuations at the interface crystal-melt are the main reason for the formation of single crystals inhomogeneity grown by the Czochralski method. To reduce the heterogeneity of the layered method is proposed to reduce temperature fluctuations in the melt through the creation of artificial heat wave formed by the modulation of the heater temperature setting of growing single crystals. This paper describes the experimental technique to measure the temperature directly in the field of crystal growth of gallium arsenide from the melt. We investigated the possibility of special control actions for decreasing the temperature fluctuations at the crystallization front. These actions relate to the modification of the thermal and kinetic control parameters normally used in the Czochralski method of crystal growth, such as heater temperature, as well as crystal and crucible rotation rates. Unsteady low energetic thermal control actions (thermal waves, induced by periodic changes of the heater temperature) are able to eliminate temperature fluctuations near the crystal / melt interface and may be a potential tool for the growth of striation-free gallium arsenide single crystals.

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