Magnetoresistance and Anomalous Hall Effect of InSb Doped with Mn

Authors A.V. Kochura1,2 , B.A. Aronzon2,3, M. Alam1, A. Lashkul2 , S.F. Marenkin4, M.A. Shakhov2,5, E.P. Kochura1 , E. Lahderanta2

1 Southwest State University, 94, 50 Let Oktjabrja Str., 305040 Kursk, Russia

2 Laboratory of Physics, Lappeenranta University of Technology, PO Box 20, FIN-53851, Lappeenranta, Finland

3 Russian Research Centre “Kurchatov institute”, 1 Kurchatov Sq., 123182 Moscow, Russia

4 Institute of General and Inorganic Chemistry of Russian Academy of Sciences, 31, Leninskii Pr., 119991 Moscow, Russia

5 Ioffe Physical Technical Institute, 26, Polytekhnicheskaya Str., 194021 St.-Petersburg, Russia

Issue Volume 5, Year 2013, Number 4
Dates Received 13 November 2013; published online 10 December 2013
Citation A.V. Kochura, B.A. Aronzon, , et al., J. Nano- Electron. Phys. 5 No 4, 04015 (2013)
PACS Number(s) 72.20.Dp, 75.50.Dd, 72.20.My
Keywords Spintronic materials (5) , Indium antimonide (2) , Magnetoresistivity, Anomalous Hall effect, Spin-dependent scattering, Nanoclusters (4) .
Annotation Transport properties of polycrystalline (In, Mn)Sb samples are investigated. Behavior of the temperature and magnetic field dependencies of the resistivity, anomalous Hall coefficient and magnetoresistivity at low temperatures points out the influence of Mn complexes, Mn ions and nano- and microsizes MnSb precipitates on charge transport.

List of References