Diode Based on Amorphous SiC
| Authors | V.S. Zakhvalinskii , L.V. Borisenko, A.J. Aleynikov, E.A. Piljuk , I. Goncharov, S.V. Taran |
| Affiliations | Belgorod National Research University, 85, Pobedy Str., 308015 Belgorod, Russia |
| Е-mail | |
| Issue | Volume 5, Year 2013, Number 4 |
| Dates | Received 11 October 2013; revised manuscript received 05 November 2013; published online 10 December 2013 |
| Citation | V.S. Zakhvalinskii, L.V. Borisenko, A.J. Aleynikov, et al., J. Nano- Electron. Phys. 5 No 4, 04029 (2013) |
| DOI | |
| PACS Number(s) | 73.20, 73.40.Eq |
| Keywords | Atomic force microscopy (9) , Transmission electron microscope (2) , Silicon carbide (9) , Thin films (60) . |
| Annotation | Diode structure on the basis of amorphous silicon carbide and p-type polycrystalline silicon (Eurosolar) were obtained with magnetron RF-nonreactive sputtering method from solid-phase target in argon atmosphere. |
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