Features of Ion-Electronic Emission from Surface of Semiconductors

Authors A. Kurochka1 , A. Sergienko1 , S. Kurochka1 , V. Kolybelkin2 , S.G. Emelyanov3 , E.V. Yakushko1 , L.M. Chervjakov3

1 National University of Science and Technology "MISIS" (MISIS), 4, Leninskiy Pr., Moscow, Russia

2 Research and production corporation "Istok", 2A, Vokzalnaya Str., Fryazino, Moscow Region, Russia

3 Southwest State University, 94, 50 let Oktyabrya, 305040 Kursk, Russia

Issue Volume 5, Year 2013, Number 4
Dates Received 05 August 2013; revised manuscript received 29 November 2013; published online 10 December 2013
Citation A. Kurochka, A. Sergienko, S. Kurochka, et al., J. Nano- Electron. Phys. 5 No 4, 04036 (2013)
PACS Number(s) 62.20.F. –
Keywords Ion-electronic emission (2) , Ion-beam etching (2) , Secondary electron current (2) , Autoelectronic emission, Electron affinity (2) , Space charge region.
Annotation The results of the research value of the current of the secondary electrons in the ion-beam etching of various semiconductors. Shows the setup and electrical circuit of the experiment. An experimental study to determine the dependence of the current of the secondary electrons from the band gap Eg and the height of the potential barrier (electron affinity) eχ. It is shown that in the conditions of ion-beam etching of the semiconductor is the penetration of the electric field, which leads to a shift of the energy levels of electrons in the surface layer. Found that the ion-electronic signal emission silicon n-type is higher than the p-type silicon.

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