Effect of Annealing on Structural and Optical Properties of Cu Doped In2O3 Thin Films

Authors S. Kaleemulla , N. Madhusudhana Rao, N. Sai Krishna, M. Kuppan , M. Rigana Begam , M. Shobana

Thin Films Laboratory, Materials Physics Division, School of Advanced Sciences, VIT University, Vellore 632014 Tamilnadu, India

Е-mail skaleemulla@gmail.com
Issue Volume 5, Year 2013, Number 4
Dates Received 03 August 2013; published online 31 January 2014
Citation S. Kaleemulla, N. Madhusudhana Rao, N. Sai Krishna, et al., J. Nano- Electron. Phys. 5 No 4, 04048 (2013)
PACS Number(s) 68.55.Jk, 73.61. – r, 78.55. – m
Keywords Indium oxide, Flash evaporation (3) , Transparent conducting oxide (6) .
Annotation Cu-doped In2O3 thin films were prepared using flash evaporation method at different Cu-doping levels. The effect of annealing was studied on the structure, morphology and optical properties of the thin films. The films exhibited cubic structure and optical transmittance of the films increasing with annealing temperature. The highest optical transmittance of 78 % was observed with band gap of 4.09 eV.

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