Effect of Annealing on Structural and Optical Properties of Cu Doped In2O3 Thin Films
| Authors | S. Kaleemulla , N. Madhusudhana Rao, N. Sai Krishna, M. Kuppan , M. Rigana Begam , M. Shobana |
| Affiliations | Thin Films Laboratory, Materials Physics Division, School of Advanced Sciences, VIT University, Vellore 632014 Tamilnadu, India |
| Е-mail | skaleemulla@gmail.com |
| Issue | Volume 5, Year 2013, Number 4 |
| Dates | Received 03 August 2013; published online 31 January 2014 |
| Citation | S. Kaleemulla, N. Madhusudhana Rao, N. Sai Krishna, et al., J. Nano- Electron. Phys. 5 No 4, 04048 (2013) |
| DOI | |
| PACS Number(s) | 68.55.Jk, 73.61. – r, 78.55. – m |
| Keywords | Indium oxide, Flash evaporation (3) , Transparent conducting oxide (6) . |
| Annotation | Cu-doped In2O3 thin films were prepared using flash evaporation method at different Cu-doping levels. The effect of annealing was studied on the structure, morphology and optical properties of the thin films. The films exhibited cubic structure and optical transmittance of the films increasing with annealing temperature. The highest optical transmittance of 78 % was observed with band gap of 4.09 eV. |
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