Some Aspects of Phosphorus Diffusion in Germanium in In0,01Ga0,99As / In0,56Ga0,44P / Ge Heterostructures
| Authors | S.P. Kobeleva , I.M. Anfimov, S.Y. Yurchuk, A.V. Turutin |
| Affiliations | National University of Science and Technology “MISIS”, Department of New Materials and Nanotecnology, 4, Leninsky Pr., 119049 Moscow, Russia |
| Е-mail | kob@misis.ru |
| Issue | Volume 5, Year 2013, Number 4 |
| Dates | Received 05 August 2013; revised manuscript received 05 November 2013; published online 10 December 2013 |
| Citation | S.P. Kobeleva, I.M. Anfimov, S.Y. Yurchuk, A.V. Turutin, J. Nano- Electron. Phys. 5 No 4, 04021 (2013) |
| DOI | |
| PACS Number(s) | 66.30.h |
| Keywords | Multi cascade solar cell, Diffussion of P in Ge, Diffusion of Ga in Ge, Heterostructure (7) . |
| Annotation | The results of experimental and theoretical researches of phosphorus distribution in the first cascade of a multi cascade solar cell based on nanoscale structures AIIIBV / Ge are presented. Secondary ion mass spectroscopy has been applied to obtain profiles of phosphorus and gallium in In0.01Ga0.99As / In0.56Ga0.44P / Ge heterostructure. In the germanium surface there is a thin layer of about 26 nm, in which the gallium concentration exceeds the concentration of phosphorus. Therefore a nanoscale p-n junction forms that does not have a significant impact on the solar cells performance at room temperature. Phosphorus diffusion is much slower in this area than in area with electronic conductivity. The main p-n junction is formed at a distance of 130-150 nm from the surface of the germanium. Diffusivity of gallium (DGa = 1,4×10 – 15 cm2/s) is markedly higher than described in a literature. Diffusivity of P increase from DP = 3×10-15 cm2/s on the boundary of the heterostructure In0, 49Ga0, 51P to DP = 5,2×10 – 14 cm2/s in n-type Ge. |
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