Authors | T.M. Grychanovs’ka , T.S. Kholod , L.A. Tsygankova , N.I. Shumakova , I.V. Cheshko |
Affiliations | Sumy State University, 2, Rimsky-Korsakov St., 40007 Sumy, Ukraine |
Е-mail | |
Issue | Volume 7, Year 2015, Number 4 |
Dates | Received 01 November 2015; revised manuscript received 21 November 2015; published online 24 December 2015 |
Citation | T.M. Grychanovs’ka, T.S. Kholod, L.A. Tsygankova, et al., J. Nano- Electron. Phys. 7 No 4, 04100 (2015) |
DOI | |
PACS Number(s) | 68.60.Dv, 73.50. – h. |
Keywords | Three-layer film systems, Phase state (3) , Resistivity (11) , Temperature coefficient of resistance. |
Annotation | The results of kinetic properties (resistivity and temperature coefficient of resistance) of the three-layer film systems based on Ni and V and Ni, Ag or Au with total thickness d = 25-55 nm were presented here. Comparison of experimental and calculated values indicates that in annealing three-layer films based on Ni and Ag is saved individuality of separate layers, while in the films based on Ni and Au, most likely, the formation of solid solutions; in films based on Ni and V partially saved individuality of separate layers with stabilized of the solid solution near interfaces. |
List of References English version of article |