ISSN: 2077-6772 (Print)

e-ISSN: 2306-4277 (Online)

Effect of a Stable Magnetic Field on Silicon Properties

Authors	M.I. Timoshina¹, E.V. Akimov¹, A.A. Gulamov², A.V. Kochura² , M.B. Dobromyslov³
Affiliations	¹ Moscow Technical University of Communications and Informatics, 8a, Aviamotornaja St., 111024 Moscow, Russia ² South-West State University, Regional Centre of Nanotechnology, 94, 50 let Octyabrya St., 305040 Kursk, Russia ³ Pacific National University, 136, Tikhookeanskaya St., 680035 Khabarovsk, Russia
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Issue	Volume 7, Year 2015, Number 4
Dates	Received 02 October 2015; published online 24 December 2015
Citation	M.I. Timoshina, E.V. Akimov, A.A. Gulamov, et al., J. Nano- Electron. Phys. 7 No 4, 04086 (2015)
DOI
PACS Number(s)	72.80.Cw, 75.47. – m, 72.40. + w
Keywords	Silicon (58) , Structural defects (2) , Magnetic field (7) , Electrical properties (19) .
Annotation	The effect of a constant magnetic field (0.17 T) on microhardness, kinetics of photoconductivity decline and electro conductivity in silicon crystals is studied. The nature of changes of micromechanical and electrophysical characteristics in samples is investigated as a function of time elapsed after magnetic treatment. The results obtained are discussed in terms of magnetic field stimulated processes occurring in a subsystem of structural defects.
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