Hopping Conductivity and Negative Magnetoresistance of the Bulk Nanograined Bi2Te3 Material
| Authors | O.N. Ivanov, R.A. Lyubushkin, M.N. Yaprintsev, I.V. Sudzhanskaya |
| Affiliations | Belgorod State University, 85, Pobedy St., 308015 Belgorod, Russia |
| Е-mail | |
| Issue | Volume 7, Year 2015, Number 4 |
| Dates | Received 01 October 2015; published online 24 December 2015 |
| Citation | O.N. Ivanov, R.A. Lyubushkin, M.N. Yaprintsev, J. Nano- Electron. Phys. 7 No 4, 04073 (2015) |
| DOI | |
| PACS Number(s) | 72.10.Fk, 72.15. – v |
| Keywords | Bulk nanograined materials, Hopping conductivity, Magnetoresistance (6) . |
| Annotation | The bulk nanograined Bi2Te3 material was prepared by the microwave assisted solvothermal method and cold isostatic pressure method. It was found that above T* ≈ 190 K the temperature dependence of the specific electrical resistivity of material is of metallic type, while below this temperature a semiconductor conductivity takes place. Within the temperature ΔT ≈ 90 K-35 K interval the electrical conductivity of material can be described by the variable-range hopping conductivity mechanism. Negative magnetoresistance was observed at the same temperature interval. |
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List of References |
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