Hopping Conductivity and Negative Magnetoresistance of the Bulk Nanograined Bi2Te3 Material

Authors O.N. Ivanov, R.A. Lyubushkin, M.N. Yaprintsev, I.V. Sudzhanskaya

Belgorod State University, 85, Pobedy St., 308015 Belgorod, Russia

Issue Volume 7, Year 2015, Number 4
Dates Received 01 October 2015; published online 24 December 2015
Citation O.N. Ivanov, R.A. Lyubushkin, M.N. Yaprintsev, J. Nano- Electron. Phys. 7 No 4, 04073 (2015)
PACS Number(s) 72.10.Fk, 72.15. – v
Keywords Bulk nanograined materials, Hopping conductivity, Magnetoresistance (6) .
Annotation The bulk nanograined Bi2Te3 material was prepared by the microwave assisted solvothermal method and cold isostatic pressure method. It was found that above T* ≈ 190 K the temperature dependence of the specific electrical resistivity of material is of metallic type, while below this temperature a semiconductor conductivity takes place. Within the temperature ΔT ≈ 90 K-35 K interval the electrical conductivity of material can be described by the variable-range hopping conductivity mechanism. Negative magnetoresistance was observed at the same temperature interval.

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